Standard SRAM, 128KX8, 100ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
| Parameter Name | Attribute value |
| Maker | Micross |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 32 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 100 ns |
| JESD-30 code | R-CDIP-T32 |
| JESD-609 code | e4 |
| length | 40.64 mm |
| memory density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum seat height | 4.34 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | PALLADIUM GOLD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 15.24 mm |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
