APM4461
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-7A, R
DS(ON)
= 25mΩ(typ.) @ V
GS
= -10V
R
DS(ON)
= 35mΩ(typ.) @ V
GS
= -4.5V
R
DS(ON)
= 55mΩ(typ.) @ V
GS
= -2.5V
Pin Description
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
•
•
•
Super High Density Cell Design
Reliable and Rugged
SOP-8 Package
SO
−
8
S
S S
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D D D D
G
P-Channel MOSFET
Ordering and Marking Information
APM 4461
H a n d lin g C o d e
Tem p. Range
Package Code
Package Code
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0
°
C
H a n d lin g C o d e
TR : Tape & R eel
AP M 4461 K :
AP M 4461
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±20
-7
Unit
V
A
Maximum Drain Current – Continuous
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
APM4461
Absolute Maximum Ratings (Cont.)
Symbol
I
DM
P
D
T
J
T
STG
R
θJA
Parameter
Maximum Drain Current – Pulsed
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=25 ºC
T
A
=100 ºC
(T
A
= 25°C unless otherwise noted)
Rating
-25
2.5
1.0
150
-55 to 150
50
Unit
A
W
ºC
ºC
ºC/W
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Parameter
(T
A
= 25°C unless otherwise noted)
APM4461
Min.
-20
-1
-0.6
25
35
55
-0.7
17.8
4
5.2
10
V
DD
=-10V , I
DS
=-2A ,
V
GEN
=-4.5 V , R
G
=0.2Ω
V
GS
=0V
V
DS
=-15V
Frequency=1.0MHz
15
32
15
1240
340
216
pF
15
20
26
25
ns
-1.5
±100
35
50
65
-1.3
21
nC
V
m[
Typ.
Max.
Test Condition
Unit
Drain-Source Breakdown Voltage V
GS
=0V , I
DS
=-250A
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
DS
=-24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V , V
DS
=0V
V
GS
=-10V , I
DS
=-7A
V
GS
=-4.5V , I
DS
=-4A
V
GS
=-2.5V , I
DS
=-2A
I
SD
=-2A, V
GS
=0V
V
DS
=-10V , V
GS
=-4.5V,
I
DS
=-2A
V
µA
V
nA
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Notes
a
b
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
: Guaranteed by design, not subject to production testing
: Pulse test ; pulse width
≤
500µs, duty cycle
≤
2%
2
www.anpec.com.tw
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
APM4461
Typical Characteristics
Output Characteristics
25
25
Transfer Characteristics
-I
D
-Drain Current (A)
20
-V
GS
=3,4,5,6,7,8,9,10V
20
15
10
-V
GS
=2V
-I
D
-Drain Current (A)
T
J
=25°C
15
10
T
J
=125°C
T
J
=-55°C
5
5
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V
DS
-Drain-to-Source Voltage (V)
-V
GS
-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
0.06
-I
DS
=250µA
On-Resistance vs. Drain Current
-V
GS(th)
-Threshold Voltage (V)
(Normalized)
R
DS(ON)
-On-Resistance (Ω)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
0.05
0.04
0.03
0.02
0.01
0.00
-V
GS
=4.5V
-V
GS
=10V
100 125 150
0
5
10
15
20
25
T
j
-Junction Temperature (°C)
-I
DS
-Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
3
www.anpec.com.tw
APM4461
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.30
-I
DS
=7A
On-Resistaence vs. Junction Temperature
1.8
-V
GS
=10V
-I
DS
=7A
R
DS (ON)
-On-Resistance (Ω)
0.25
0.20
0.15
0.10
0.05
0.00
R
DS(ON)
-On Resistance (Ω)
(Normalized)
1
2
3
4
5
6
7
8
9
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150
-V
GSj
-Gate-to-Source Voltage (V)
T
j
-Junction Temperature (°C)
Gate Charge
10
1800
-V
DS
=10V
-I
DS
=2A
Capacitance Characteristics
Frequency=1MHz
-V
GS
-Gate-to-Source Voltage (V)
1600
1400
8
C-Capacitance (pF)
Ciss
1200
1000
800
600
400
200
Coss
Crss
6
4
2
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
Q
G
-Total Gate Charge (nC)
-V
DS
-Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
4
www.anpec.com.tw
APM4461
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
25
10
50
60
Single Pulse Power
-I
S
-Source Current (A)
1
T
J
=150°C
T
J
=25°C
Power (W)
1.2
1.4
40
30
20
10
0
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0.1
1
10
30
-V
SD
-Source to Drain Voltage
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
SINGLE PULSE
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
5
www.anpec.com.tw
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