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B5817W

Description
1 A, 20 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size55KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric View All

B5817W Overview

1 A, 20 V, SILICON, SIGNAL DIODE

B5817W Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknown
B5817W
FEATURES
SCHOTTKY BARRIER DIODE
SOD-123
P
D
:
450
mW (Tamb=25℃)
2. 70
1. 6
Collector current
1
A
I
F
:
Collector-base voltage
20
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Unit: mm
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V
(BR)
I
R
V
F
C
D
Test
conditions
I
R
= 1mA
V
R
=20V
I
F
=1A
I
F
=3A
MIN
20
MAX
UNIT
V
1
0.45
0.75
120
V
R
=4V, f=1MHz
0. 55
3. 70
1. 05
Power dissipation
mA
V
pF
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