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2N1308

Description
300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
CategoryDiscrete semiconductor    The transistor   
File Size759KB,6 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

2N1308 Overview

300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5

2N1308 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Maximum collector current (IC)0.3 A
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature100 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)15 MHz
Base Number Matches1

2N1308 Related Products

2N1308 2N1302 2N1304 2N1306
Description 300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5 300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5 300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5 300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code _compli _compli _compli _compli
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 10 15 20
JEDEC-95 code TO-5 TO-5 TO-5 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials GERMANIUM GERMANIUM GERMANIUM GERMANIUM
Nominal transition frequency (fT) 15 MHz 3 MHz 5 MHz 10 MHz
Maker - Central Semiconductor Central Semiconductor Central Semiconductor
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