2N1302 datasheet, PDF - EEWORLD Datasheet

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2N1302: Description300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5; CategoryDiscrete semiconductor The transistor; File Size759KB，6 Pages; ManufacturerCentral Semiconductor

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2N1302 Overview

300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5

2N1302 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	100 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	GERMANIUM
Nominal transition frequency (fT)	3 MHz

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2N1302 Related Products

	2N1302	2N1308	2N1304	2N1306
Description	300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5	300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5	300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5	300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	_compli	_compli	_compli
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	20	15	20
JEDEC-95 code	TO-5	TO-5	TO-5	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	GERMANIUM	GERMANIUM	GERMANIUM	GERMANIUM
Nominal transition frequency (fT)	3 MHz	15 MHz	5 MHz	10 MHz
Maker	Central Semiconductor	-	Central Semiconductor	Central Semiconductor

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