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BFR99

Description
ABSOLUTE MAXIMUM RATINGS
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BFR99 Overview

ABSOLUTE MAXIMUM RATINGS

BFR99 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)2000 MHz
BFR99
DESCRIPTION
The BFR99 is a silicon planar epitaxial PNP transistor
in Jedec TO-72 metal case, particularly designed for
wide band common-emitter linear amplifier applica-
tions up to 1GHz. It features high fT, low reverse ca-
pacitance, good cross-modulation properties and
low noise.
TO-72
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
t o t
T
s t g
, T
j
October 1988
Parameter
Collector–base Voltage (I
E
= 0)
Collector–emitter Voltage (I
B
= 0)
Emitter–base Voltage (I
C
= 0)
Collector Current
Total Power Dissipation at T
am b
25
°C
at T
cas e
25
°C
Storage and Junction Temperature
Value
– 25
– 25
– 3
– 50
225
360
– 55 to 200
Unit
V
V
V
mA
mW
mW
°C
1/4
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