BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 — 1 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I
Very low on-state resistance
I
150
°C
rated
I
Q101 compliant
I
Standard level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V and 24 V loads
1.4 Quick reference data
I
E
DS(AL)S
≤
53 mJ
I
I
D
≤
7 A
I
R
DSon
= 68 mΩ (typ)
I
P
tot
≤
8 W
2. Pinning information
Table 1.
Pin
1
2
3
4
Pinning
Description
gate (G)
drain (D)
source (S)
solder point; connected to drain (D)
mbb076
Simplified outline
4
Symbol
D
G
S
1
2
3
sot223_so
SOT223 (SC-73)
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Package
Name
BUK7880-55A
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version
SOT223
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
E
DS(AL)R
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
T
sp
= 25
°C
T
sp
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 7 A; V
DS
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V; starting at T
j
= 25
°C
[1]
Conditions
R
GS
= 20 kΩ
T
sp
= 25
°C;
V
GS
= 10 V; see
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 10 V; see
Figure 2
T
sp
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
sp
= 25
°C;
see
Figure 1
Min Max
-
-
-
-
-
-
-
55
55
±20
7
5
30
8
Unit
V
V
V
A
A
A
W
−55
+150
°C
−55
+150
°C
-
-
-
-
7
30
53
-
A
A
mJ
J
Source-drain diode
Avalanche ruggedness
[1]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in
Figure 16.
b) Single-pulse avalanche rating limited by T
j(max)
of 150
°C.
c) Repetitive avalanche rating limited by an average junction temperature of 150
°C.
d) Refer to application note
AN10273
for further information.
BUK7880-55A_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2007
2 of 13
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
03aa17
8
I
D
(A)
6
003aab532
4
40
2
0
0
50
100
150
T
sp
(
°
C)
200
0
0
50
100
T
sp
(°C)
150
P
tot
P
der
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
10
2
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
10
V
GS
≥
10 V
Fig 2. Continuous drain current as a function of
solder point temperature
003aab530
t
p
= 10
µ
s
100
µ
s
1 ms
1
DC
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
sp
= 25
°C;
I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7880-55A_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2007
3 of 13
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Symbol
R
th(j-a)
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to solder point
Conditions
Min
-
-
Typ
70
-
Max
-
15
Unit
K/W
K/W
10
2
Z
th(j-sp)
(K/W)
10
δ
= 0.5
0.2
0.1
1 0.05
0.02
P
003aab529
δ
=
t
p
T
10
-1
single shot
t
p
T
t
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK7880-55A_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2007
4 of 13
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
drain-source breakdown voltage I
D
= 250
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; see
Figure 9
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate leakage current
V
GS
=
±20
V; V
DS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 15 A; V
GS
= 0 V; see
Figure 15
I
S
= 20 A; dI
S
/dt =
−100
A/µs;
V
GS
=
−10
V; V
R
= 30 V
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
see
Figure 12
I
D
= 10 A; V
DD
= 44 V; V
GS
= 10 V;
see
Figure 14
-
-
-
-
-
-
-
-
-
-
-
-
-
12
2.5
5
374
92
62
8
52
17
9
0.85
33
31
-
-
-
500
110
85
-
-
-
-
1.2
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
drain-source on-state resistance V
GS
= 10 V; I
D
= 10 A; see
Figure 6
and
8
-
-
68
-
80
148
mΩ
mΩ
-
-
-
0.05
-
2
10
500
100
µA
µA
nA
2
1.2
-
3
-
-
4
-
4.4
V
V
V
55
50
-
-
-
-
V
V
Source-drain diode
BUK7880-55A_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 November 2007
5 of 13
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