VS-6CWH02FNPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
Base
common
cathode
4
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
D-PAK (TO-252AA)
2x3A
200 V
1.0 V
See Recovery table
175 °C
Common cathode
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 159 °C
Total device, rated V
R
, T
C
= 159 °C
TEST CONDITIONS
MAX.
200
6
50
6
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 3 A
Forward voltage
V
F
I
F
= 3 A, T
J
= 125 °C
I
F
= 6 A
I
F
= 6 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1
0.9
1.2
1.08
5
100
-
-
μA
pF
nH
V
UNITS
Document Number: 94550
Revision: 13-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-6CWH02FNPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 3 A
V
R
= 160 V
dI
F
/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
TYP.
-
19
26
3.1
4.6
30
60
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
Case style D-PAK
TYP.
-
-
-
-
0.3
0.01
-
MAX.
175
5
80
-
-
-
12
(10)
6CWH02FN
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94550
Revision: 13-Jan-11
VS-6CWH02FNPbF
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
Vishay Semiconductors
100
Reverse Current - I
R
(μA)
100
T J = 175˚C
10
150˚C
125˚C
100˚C
1
0.1
Instantaneous Forward Current - I
F
(A)
10
0.01
25˚C
0.001
0
50
100
150
Reverse Voltage - V
R
(V)
200
Tj = 175°C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
1
Tj = 125°C
Tj = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
10
100
Reverse Voltage - V
R
(V)
1000
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capacitance - C
T
(pF)
T J = 25˚C
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94550
Revision: 13-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-6CWH02FNPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
50
180
Allowable Case Temperature (°C)
170
160
150
140
130
0
1
2
3
4
Average Forward Current - I
F
(AV)
(A)
5
Square wave (D=0.50)
rated Vr applied
40
IF = 3 A
IF = 6 A
DC
trr ( nC )
see note (1)
V
R
= 30V
T
J
= 125˚C
T
J
= 25˚C
30
20
10
100
1000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
di
F
/dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. dI
F
/dt
140
5
120
V
R
= 30V
T
J
= 125˚C
T
J
= 25˚C
Average Power Loss ( Watts )
4
RMS Limit
100
IF = 6 A
IF = 3 A
2
Qrr ( nC )
5
3
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
80
60
1
DC
40
0
0
1
2
3
4
20
Average Forward Current - I
F
(AV)
(A)
0
100
1000
Fig. 6 - Forward Power Loss Characteristics
di
F
/dt (A/μs )
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94550
Revision: 13-Jan-11
VS-6CWH02FNPbF
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94550
Revision: 13-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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