INFRARED DETECTOR
InSb photoconductive detector
P6606 series
Thermoelectrically cooled detectors capable of long-term measurements
Features
Applications
l
Thermoelectric cooling ensures high speed and high
l
Environment measurements (gas analysis, etc.)
sensitivity up to 6.5 µm.
l
Radiation thermometers (5 µm band)
l
Photoconductive element that changes electrical
l
FTIR
resistance by input of IR radiation
l
IR laser detection
l
Easy-to-use detector/preamp modules are also available.
Accessories (optional)
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Heatsink for three-stage TE-cooled type A3179-04
l
Temperature controller
C1103-05 (-75 to -25 ˚C)
C1103-07 (-30 to +20 ˚C)
l
Preamp
C5185
l
Infrared detector module with preamp
P4631-03 (P6606-310)
s
Specifications / Absolute maximum ratings
Type No.
Di m e nsional
outline/
Package
Window
material *
1
Absolute maximum ratings
Thermistor TE-cooler
Operating
Storage
Allowable
power
power
temperature temperature
Cooling
current
dissipation dissipation
Topr
Tstg
(mm)
(mW)
(A)
(mA)
(°C)
(°C)
One-stage TE-cooled
1.5
1×1
40
Two-stage TE-cooled
1.0
0.5 × 0.5
20
0.2
-40 to +60 -55 to +60
Three-stage TE-cooled 1 × 1
1.0
40
2×2
60
Active
area
P6606-110
TO-8
➀
/S
P6606-210
P6606-305
TO-3
P6606-310
➁
/S
P6606-320
*1: Window material S: Sapphire glass
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measure ment
Peak
Photo *
2
condition
Cut-off
sensitivity
sensitivity
Element wavelength wavelength
S
te m p erature
λc
λp
λ=λp
T
D
∗
(500, 1200, 1)
D
∗
(λp, 1200, 1)
Rise time
tr
0 to 63 %
Dark
resistance
Rd
Type No.
Min.
Typ.
1/2
(°C)
(µm)
(µm)
(V/W)
(cm·Hz /W) (cm·Hz
1/2
/W) (cm·Hz
1/2
/W)
(µs)
(Ω)
7
8
9
P6606-110
-10
6.7
10
7 × 10
2 × 10
1 × 10
20
8
8
9
P6606-210
-30
6.5
50
1.5 × 10
5 × 10
2.5 × 10
25
P6606-305
5.5
2500
1 × 10
9
2 × 10
9
1 × 10
10
0.4
150
-60
6.3
P6606-310
650
1 × 10
9
2 × 10
9
1 × 10
10
80
8
9
9
150
5 × 10
80
P6606-320
1 × 10
5 × 10
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
1
InSb photoconductive detector
s
Spectral response
10
11
P6606 series
s
D* vs. element temperature
(Typ. T= -60 ˚C)
10
11
(Typ.)
D* (λ, 1200, 1) (cm · Hz
2
/W)
D* (λ, 1200, 1) (cm · Hz
2
/W)
1
1
10
10
10
10
10
9
10
9
10
8
2
3
4
5
6
7
10
8
-60
-50
-40
-30
-20
-10
0
WAVELENGTH (µm)
KIRDB0166EB
ELEMENT TEMPERATURE (˚C)
KIRDB0167EA
s
Thermistor temperature characteristic
(Typ.)
1 MΩ
s
Cooling characteristics of TE-cooler
[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler),
1.2 ˚C/W (three-stage TE-cooler)]
40
ELEMENT TEMPERATURE (˚C)
20
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
RESISTANCE
100 kΩ
0
-20
10 kΩ
-40
THREE-STAGE
TE-COOLED TYPE
-60
1 kΩ
-80
-60
-40
-20
0
20
40
-80
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE (˚C)
KIRDB0168EA
TE-COOLER CURRENT (A)
KIRDB0177EA
2
InSb photoconductive detector
s
Current vs. voltage of TE-cooler
[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler),
1.2 ˚C/W (three-stage TE-cooler)]
P6606 series
1.6
1.4
1.2
ONE-STAGE
TE-COOLED TYPE
CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0.0
THREE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
0
0.5
1.0
1.5
2.0
2.5
VOLTAGE (V)
KIRDB0176EB
s
Measurement circuit
CHOPPER
1200 Hz
BAND-PASS
FILTER
r.m.s.
METER
DETECTOR
BLACK BODY
500 K
fo=1200 Hz
∆f=120
Hz
INCIDENT ENERGY: 2.64 µW/cm
2
KIRDC0005EA
3
InSb photoconductive detector
s
Dimensional outlines (unit: mm)
➀
P6606-110/-210
15.3 ± 0.2
14 ± 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
10 ± 0.2
P6606 series
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
12 MIN.
10.0 ± 0.2
a
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
P6606-110 P6606-210
a
4.2 ± 0.2
6.6 ± 0.2
KIRDA0126EA
5.1 ± 0.2
10.2 ± 0.2
➁
P6606-305/-310/-320
39
30.1 ± 0.1
4
19.4 ± 0.2
7.0 ± 0.2
12 ± 1
2.0
25.4 ± 0.2
PHOTOSENSITIVE WINDOW
10 ± 0.2
SURFACE
PUMP-OUT PIPE
5 MAX.
12.7 ± 0.2
40˚
25 MAX.
1.0
LEAD
11.6 ± 0.2
TE-COOLER (+)
DETECTOR
THERMISTOR
PUMP-OUT PIPE
NC
TE-COOLER (-)
40˚
40˚
40˚
40˚
KIRDA0127EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1026E06
May 2004 DN
4
Embedded System
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