P6606_04 datasheet, PDF - EEWORLD Datasheet

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P6606_04: DescriptionInSb photoconductive detector; File Size109KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com

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P6606_04 Overview

InSb photoconductive detector

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INFRARED DETECTOR

InSb photoconductive detector

P6606 series

Thermoelectrically cooled detectors capable of long-term measurements

Features

Applications

Thermoelectric cooling ensures high speed and high

Environment measurements (gas analysis, etc.)

sensitivity up to 6.5 µm.

Radiation thermometers (5 µm band)

Photoconductive element that changes electrical

FTIR

resistance by input of IR radiation

IR laser detection

Easy-to-use detector/preamp modules are also available.

Accessories (optional)

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Heatsink for three-stage TE-cooled type A3179-04

Temperature controller

C1103-05 (-75 to -25 ˚C)

C1103-07 (-30 to +20 ˚C)

Preamp

C5185

Infrared detector module with preamp

P4631-03 (P6606-310)

Specifications / Absolute maximum ratings

Type No.

Di m e nsional

outline/

Package

Window

material *

Absolute maximum ratings

Thermistor TE-cooler

Operating

Storage

Allowable

power

temperature temperature

Cooling

current

dissipation dissipation

Topr

Tstg

(mm)

(mW)

(A)

(mA)

(°C)

One-stage TE-cooled

1.5

1×1

Two-stage TE-cooled

1.0

0.5 × 0.5

0.2

-40 to +60 -55 to +60

Three-stage TE-cooled 1 × 1

1.0

2×2

Active

area

P6606-110

TO-8

➀

P6606-210

P6606-305

TO-3

P6606-310

➁

P6606-320

*1: Window material S: Sapphire glass

Electrical and optical characteristics (Typ. unless otherwise noted)

Measure ment

Peak

Photo *

condition

Cut-off

sensitivity

Element wavelength wavelength

te m p erature

λc

λp

λ=λp

∗

(500, 1200, 1)

∗

(λp, 1200, 1)

Rise time

0 to 63 %

Dark

resistance

Type No.

Min.

Typ.

1/2

(°C)

(µm)

(V/W)

(cm·Hz /W) (cm·Hz

1/2

/W) (cm·Hz

1/2

/W)

(µs)

(Ω)

P6606-110

-10

6.7

7 × 10

2 × 10

1 × 10

P6606-210

-30

6.5

1.5 × 10

5 × 10

2.5 × 10

P6606-305

5.5

2500

1 × 10

2 × 10

1 × 10

0.4

150

-60

6.3

P6606-310

650

1 × 10

2 × 10

1 × 10

150

5 × 10

P6606-320

1 × 10

5 × 10

*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.

P6606_04 Related Products

	P6606_04	P6606-110	P6606-210	P6606-305	P6606-320	P6606-310
Description	InSb photoconductive detector	InSb photoconductive detector	InSb photoconductive detector	InSb photoconductive detector	InSb photoconductive detector	InSb photoconductive detector
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to
Maker	-	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu
package instruction	-	TO-8, 6 PIN	TO-8, 6 PIN	TO-3, 8 PIN	TO-3, 8 PIN	TO-3, 8 PIN
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow
Configuration	-	SINGLE WITH BUILT-IN TE-COOLER AND THERMISTOR	SINGLE WITH BUILT-IN TE-COOLER AND THERMISTOR	COMPLEX	COMPLEX	COMPLEX
Number of functions	-	1	1	1	1	1
Maximum operating temperature	-	60 °C	60 °C	60 °C	60 °C	60 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Optoelectronic device types	-	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE	OPTOELECTRONIC DEVICE

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