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2SC4880

Description
Silicon NPN Triple Diffused
CategoryDiscrete semiconductor    The transistor   
File Size24KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4880 Overview

Silicon NPN Triple Diffused

2SC4880 Parametric

Parameter NameAttribute value
Parts packaging codeTO-3PL
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)12 A
Collector-emitter maximum voltage900 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SC4880
Silicon NPN Triple Diffused
Application
TV/character display horizontal deflection output
Features
High speed switching
t
f
0.5 µs
High breakdown voltage
V
CBO
= 1700 V
Outline
TO-3PL
1. Base
2. Collector
3. Emitter
1
2
3
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Index Files: 1769  1705  621  1502  2252  36  35  13  31  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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