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S8865-256

Description
Photodiode array combined with signal processing circuit chip
File Size88KB,6 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet View All

S8865-256 Overview

Photodiode array combined with signal processing circuit chip

PHOTODIODE
Photodiode array with amplifier
S8865-256, S8865-256G
Photodiode array combined with signal processing circuit chip
S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external
circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-ray detection
applications, types with fluorescent paper affixed on the active area are also available.
Features
Applications
l
Element pitch: 0.2 mm pitch × 256 ch
l
5 V power supply operation
l
Simultaneous integration by using a charge amplifier
l
Long line sensors
l
Line sensors for X-ray detection
array
l
Sequential readout with a shift register
(Data rate: 1 MHz Max.)
l
Low dark current due to zero-bias photodiode
operation
l
Integrated clamp circuit allows low noise and wide
dynamic range
l
Integrated timing generator allows operation at two
different input pulse timings (reset, clock)
l
Types with phosphor screen affixed on the active area are
available for X-ray detection: S8865-256G
s
Specifications of active area
Parameter
Element pitch
Element width
Element height
Number of elements
Active area length
*1: Refer to following figure.
Symbol *
1
P
W
H
-
-
Value
0.2
0.1
0.3
256
51.2
Unit
mm
mm
mm
-
mm
s
Enlarged view of active area
W
P
PHOTODIODE
H
KMPDC0072EB
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