PHOTODIODE
Si APD
S9717 series
High reliability, surface-mount ceramic package
S9717 series are Si APD (avalanche photodiodes) encapsulated in a surface-mount ceramic package that ensures high reliability in the same
wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various
photometric application fields.
Features
Applications
l
Surface-mount package with high reliability equivalent to
l
l
metal package
(No dark current increase after high temperature/humidity
testing at 85 ˚C, 85 % for 1000 hours.)
Small, thin package: 3.5 × 4.0 mm
S9717-02K/-05K: Flat glass window
S9717-05L: Lens glass window
l
Rangefinder
l
Laser rader
l
Spatial light transmission
s
General ratings
Parameter
Active area size
Window material
S9717-02K
φ0.2
S9717-05K
φ0.5
S9717-05L
φ0.5
Borosilicate glass,
φ0.8
lens
Unit
mm
-
Borosilicate glass
s
Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +85
-55 to +125
Unit
°C
°C
s
Electrical and optical characteristics (Typ. Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Breakdown voltage
Temp. coefficient of V
BR
Dark current
Terminal capacitance
Cut-off frequency
Excess noise figure
Gain
Symbol
λ
λp
S
V
BR
-
I
D
Ct
fc
x
M
Typ.
Max.
M=100, f=1 MHz
M=100, R
L
=50
Ω
λ=800
nm, -3 dB
M=100
λ=800
nm
M=100
50
500
1.5
1000
Condition
M=100
λ=800
nm, M=1
Typ.
I
D
=100 µA
Max.
S9717-02K
S9717-05K
400 to 1000
800
0.5
150
200
0.65
100
1000
3
900
0.3
100
S9717-05L
Unit
nm
nm
A/W
V
V/°C
100
1000
3
900
pA
pF
MHz
-
-
1
Si APD
s
Spectral response
50
(Typ. Ta=25 ˚C,
λ=800
nm)
M=100
S9717 series
(Typ. Ta=25 ˚C)
s
Dark current vs. reverse voltage
1 nA
PHOTO SENSITIVITY (A/W)
40
DARK CURRENT
100 pA
S9717-05K/-05L
30
M=50
20
S9717-02K
10 pA
10
0
200
400
600
800
1000
1 pA
0
50
100
150
200
WAVELENGTH (nm)
KAPDB0020EB
REVERSE VOLTAGE (V)
KAPDB0101EA
s
Gain vs. reverse voltage
10000
20 ˚C
(Typ.
λ=800
nm)
0 ˚C
1000
-20 ˚C
GAIN
100
40 ˚C
10
60 ˚C
1
80
100
120
140
160
180
REVERSE VOLTAGE
(V)
KAPDB0017EC
s
Dimensional outlines (uint: mm)
S9717-02K/-05K
3.5 ± 0.2
ACTIVE AREA
(3 ×) 0.8
S9717-05L
3.5 ± 0.2
LENS
(3 ×) 0.8
(1.25)
4.0 ± 0.2
(2 ×) 0.95
4.0 ± 0.2
1.27
(6 ×) R0.15
2.54
1.27
(6 ×) R0.15
(2 ×) 0.95
(1.25)
2.54
3.3
1.4
3.3
0.8
0.6
1.3
KAPDA0032EA
1.1
ANODE
CATHODE
GND
1.33
1.08
0.4
0.6
ANODE
CATHODE
GND
KAPDA0033EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1014E02
Mar. 2006 DN
京公网安备 11010802033920号
EEWORLD
