74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
Rev. 1 — 7 August 2012
Product data sheet
1. General description
74HC1G02-Q100 and 74HCT1G02-Q100 are high speed Si-gate CMOS devices. They
provide a 2-input NOR function.
The standard output currents are half those of the 74HC02-Q100 and 74HCT02-Q100.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Input levels:
For 74HC1G02-Q100: CMOS level
For 74HCT1G02-Q100: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1G02GW-Q100
74HCT1G02GW-Q100
74HC1G02GV-Q100
74HCT1G02GV-Q100
40 C
to +125
C
SC-74A
40 C
to +125
C
Name
TSSOP5
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
Version
SOT353-1
Type number
plastic surface-mounted package; 5 leads SOT753
NXP Semiconductors
74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
4. Marking
Table 2.
Marking codes
Marking
[1]
HB
TB
H02
T02
Type number
74HC1G02GW-Q100
74HCT1G02GW-Q100
74HC1G02GV-Q100
74HCT1G02GV-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
B
1
2
B
A
Y
4
1
2
A
mna103
mna104
mna105
≥
1
4
Y
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
+&*4
+&7*4
%
$
*1'
DDD
9
&&
<
Fig 4.
Pin configuration
6.2 Pin description
Table 3.
Symbol
B
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
data input
data input
ground (0 V)
data output
supply voltage
74HC_HCT1G02_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 August 2012
2 of 12
NXP Semiconductors
74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
H
L
L
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
Min
0.5
-
-
-
-
25
65
Max
+7.0
20
20
12.5
25
-
+150
200
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
C,
the value of P
tot
derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC1G02-Q100
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT1G02-Q100
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
74HC_HCT1G02_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 August 2012
3 of 12
NXP Semiconductors
74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
40 C
to +85
C
Min
74HC1G02-Q100
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
2.0
mA; V
CC
= 4.5 V
I
O
=
2.6
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
O
= 2.6 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
V
IH
V
IL
V
OH
input leakage current
supply current
input capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
2.0
mA; V
CC
= 4.5 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
I
input leakage current
V
I
= V
CC
or GND; V
CC
= 5.5 V
-
-
-
0
0.15
-
0.1
0.33
1.0
-
-
-
0.1
0.4
1.0
V
V
A
4.4
4.13
4.5
4.32
-
-
4.4
3.7
-
-
V
V
2.0
-
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
- 1.5
1.6
1.2
0.1
0.1
0.1
0.33
0.33
1.0
10
-
-
0.8
-
-
-
-
-
-
-
-
2.0
-
0.1
0.1
0.1
0.4
0.4
1.0
20
-
-
0.8
V
V
V
V
V
A
A
pF
V
V
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
40 C
to +125
C
Min
Max
Unit
74HCT1G02-Q100
74HC_HCT1G02_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 August 2012
4 of 12
NXP Semiconductors
74HC1G02-Q100; 74HCT1G02-Q100
2-input NOR gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
I
CC
I
CC
C
I
Parameter
supply current
additional supply
current
input capacitance
Conditions
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
-
-
40 C
to +85
C
Min
-
-
- 1.5
Typ
Max
10
500
-
-
-
-
40 C
to +125
C
Min
20
850
-
Max
A
A
pF
Unit
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
6.0 ns; All typical values are measured at T
amb
= 25
C. For test circuit see
Figure 6
Symbol Parameter
74HC1G02-Q100
t
pd
propagation delay A and B to Y; see
Figure 5
V
CC
= 2.0 V; C
L
= 50 pF
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V; C
L
= 50 pF
C
PD
power dissipation V
I
= GND to V
CC
capacitance
propagation delay A and B to Y; see
Figure 5
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
C
PD
power dissipation V
I
= GND to V
CC
1.5 V
capacitance
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
= C
PD
V
CC2
f
i
+
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
(C
L
V
CC2
f
o
) = sum of outputs
[2]
[2]
[1]
Conditions
40 C
to +85
C
Min
Typ
Max
40 C
to +125
C
Unit
Min
Max
-
-
-
-
-
25
9
7
8
18
115
23
-
20
-
-
-
-
-
-
135
27
-
23
-
ns
ns
ns
ns
pF
74HCT1G02-Q100
t
pd
[1]
-
-
-
11
9
19
24
-
-
-
-
-
27
-
-
ns
ns
pF
[1]
[2]
74HC_HCT1G02_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 August 2012
5 of 12
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