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30CTH02STRLPBF

Description
15 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size285KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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30CTH02STRLPBF Overview

15 A, 200 V, SILICON, RECTIFIER DIODE

30CTH02STRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionD2PAK-3
Contacts3
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE
applicationHYPER FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals2
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-21071 rev. A 12/06
30CTH02SPbF
30CTH02-1PbF
Hyperfast Rectifier
Features
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
t
rr
=30ns max.
I
F(AV)
= 30Amp
V
R
= 200V
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T
C
= 159°C Per Diode
Per Device
Non Repetitive Peak Surge Current @ T
J
= 25°C
Operating Junction and Storage Temperatures
Max
200
15
30
200
- 65 to 175
Units
V
A
°C
Case Styles
30CTH02SPbF
30CTH02-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
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