2SJ619
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
-π-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
•
•
•
•
•
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.15
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 7.7 S (typ.)
Low leakage current: I
DSS
=
−100
µA (max) (V
DS
=
−100
V)
Enhancement model: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−100
−100
±20
−16
−64
75
292
−16
7.5
150
−55
to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.67
Unit
°C/W
Circuit Configuration
4
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= −25
V, T
ch
=
25°C (initial), L
=
1.84 mH, R
G
=
25
Ω,
I
AR
= −16
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-16
2SJ619
Electrical Characteristics (Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
V
GS
Turn-ON time
Switching time
Fall time
t
f
Duty
<
1%, t
w
=
10
μs
=
V
DD
∼
−50
V
−
⎯
⎯
V
DD
∼
−80
V, V
GS
= −10
V, I
D
= −16
A
−
⎯
⎯
65
48
29
19
⎯
⎯
⎯
⎯
nC
t
on
I
D
= −8
A
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −100
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −4
V, I
D
= −6
A
V
GS
= −10
V, I
D
= −6
A
V
DS
= −10
V, I
D
= −6
A
4.5
⎯
⎯
⎯
⎯
V
OUT
⎯
50
Ω
R
L
=
6.25
Ω
⎯
18
⎯
30
⎯
ns
Min
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.25
0.15
7.7
1100
210
440
18
Max
±10
Unit
μA
μA
V
V
Ω
S
−
100
⎯
−
100
−
0.8
⎯
−
2.0
0.32
0.21
⎯
⎯
⎯
⎯
⎯
pF
0V
−10
V
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
= −16
A, V
GS
=
0 V
I
DR
= −16
A, V
GS
=
0 V,
dI
DR
/dt
=
50 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
160
0.5
Max
−16
−64
1.7
⎯
⎯
Unit
A
A
V
μs
μC
Marking
Part No. (or abbreviation code)
J619
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16
2SJ619
R
DS (ON)
−
Tc
(Ω)
0.5
−30
Common source
pulse test
0.4
−4
0.3
−2
ID
= −8
V
−8
−2,
4
Common source
Tc
=
25°C
pulse test
−10
−5
−3
VGS
= −10
V
−5
−3
I
DR
−
V
DS
Drain-source on resistance R
DS (ON)
0.2 V
GS
= −4
V
Drain reverse current I
DR
(A)
−1.0
−0.5
0.1
VGS
= −10
V
0
−80
−2
−1
0, 1
0.6
0.8
1.0
−40
0
40
80
120
160
−0.3
0
0.2
0.4
Case temperature
Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
5000
3000
−4
V
th
−
Tc
Common source
VDS
= −10
V
ID
= −1
mA
pulse test
(pF)
1000
500
300
Ciss
V
th
(V)
Gate threshold voltage
−100
−3
Capacitance C
Coss
Crss
−2
100
50
Common source
30
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
−0.1
−0.3
−1
−1
−3
−10
−30
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
P
D
−
Tc
100
−100
Dynamic input/output characteristics
Common source
ID
= −16
A
Tc
=
25°C
pulse test
VDS
−60
VDD
= −80
V
−40
−20
−20
VGS
0
0
0
100
−4
−40
−8
−12
−20
Drain power dissipation P
D
(W)
V
DS
(V)
80
−80
−16
40
20
0
0
Drain-source voltage
40
80
120
160
200
20
40
60
80
Case temperature
Tc (°C)
Total gate charge Q
g
(nC)
4
2006-11-16
Gate-source voltage
60
V
GS
(V)
2SJ619
r
th
−
t
w
10
Normalized transient thermal impedance
r
th (t)
/R
th (ch-a)
3
1
Duty
=
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
10
μ
100
μ
1m
10 m
100 m
Single pulse
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
1.67°C/W
1
10
Pulse width
t
w
(S)
Safe operating area
−1000
500
E
AS
– T
ch
Avalanche energy E
AS
(mJ)
400
−100
ID max (pulsed)
*
100
μs
*
Drain current I
D
(A)
300
ID max (continuous)
−10
DC operation
Tc
=
25°C
−1
*:
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
−1
−10
1 ms
*
200
100
−0.1
−0.1
VDSS max
−100
−1000
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
= −25
V, L
=
1.84 mH
Wave form
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
5
2006-11-16
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