1N5711 and 1N6263
Vishay Semiconductors
formerly General Semiconductor
Schottky Diodes
DO-204AH
(DO-35 Glass)
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
• This diode is also available in the MiniMELF case with
type designation LL5711 and LL6263.
Mechanical Data
Dimensions in inches
and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics
Parameter
Peak Inverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10
µs
Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
1N5711
1N6263
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
RRM
P
tot
I
FSM
R
ΘJA
T
j
T
S
Value
70
60
400
(1)
2.0
0.3
(1)
125
(1)
–55 to +150
(1)
Unit
V
mW
A
°C/mW
°C
°C
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage Drop
Junction Capacitance
(T
J
= 25°C unless otherwise noted)
Symbol
1N5711
1N6263
V
(BR)R
I
R
V
F
1N5711
1N6263
C
tot
t
rr
Test Condition
I
R =
10µA
V
R
= 50V
I
F
= 1mA
I
F
= 15mA
V
R
= 0V, f = 1MHz
I
F
= I
R
= 5mA,
recover to 0.1I
R
Min
70
60
—
—
—
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
200
0.41
1.0
2.0
2.2
1
Unit
V
nA
V
pF
ns
Reverse Recovery Time
Note:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Document Number 88111
8-May-02
www.vishay.com
1
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