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RN1401_07

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
File Size574KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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RN1401_07 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1401½RN1406
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1401, RN1402, RN1403
RN1404, RN1405, RN1406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2401~RN2406
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
R1 (kΩ
4.7
10
22
47
2.2
4.7
R2 (kΩ
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1401~1406
RN1401~1406
RN1401~1404
RN1405, 1406
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

RN1401_07 Related Products

RN1401_07 RN1403 RN1401 RN1402 RN1406 RN1405 RN1404
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Maker - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor - Toshiba Semiconductor
Parts packaging code - SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3 3 3 3 3
Reach Compliance Code - unknow unknow unknow unknow unknow unknow
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features - BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity - 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage - 50 V 50 V 50 V 50 V 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 70 30 50 80 80 80
JEDEC-95 code - TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components - 1 1 1 1 1 1
Number of terminals - 3 3 3 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) - 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
VCEsat-Max - 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
JESD-609 code - - e0 e0 - e0 e0
Terminal surface - - TIN LEAD TIN LEAD - TIN LEAD TIN LEAD
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