TC74AC86P/F/FN/FT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74AC86P,TC74AC86F,TC74AC86FN,TC74AC86FT
Quad Exclusive OR Gate
The TC74AC86 is an advanced high speed CMOS QUAD
EXCLUSIVE OR GATE fabricated with silicon gate and
double-layer metal wiring C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is includes on output buffer, which provide
high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74AC86P
Features
•
•
•
•
High speed: t
pd
= 4.4 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4
μA
(max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
Symmetrical output impedance: |I
OH
| = I
OL
= 24 mA (min)
Capability of driving 50
Ω
transmission lines.
∼
Balanced propagation delays: t
pLH
−
t
pHL
Wide operating voltage range: V
CC (opr)
= 2 to 5.5 V
Pin and function compatible with 74F86
TC74AC86F
•
•
•
TC74AC86FN
TC74AC86FT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
1
2007-10-01
TC74AC86P/F/FN/FT
Pin Assignment
IEC Logic Symbol
1A
1B
2A
2B
3A
3B
4A
4B
(1)
(2)
(4)
(5)
(9)
(10)
(12)
(13)
=1
(3)
(6)
(8)
(11)
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
4B
4A
4Y
3B
3A
3Y
1Y
2Y
3Y
4Y
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
L
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to V
CC
+ 0.5
−0.5
to V
CC
+ 0.5
±20
±50
±50
±100
500 (DIP) (Note 2)/180 (SOP/TSSOP)
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta =
−40
to 65°C. From Ta = 65 to 85°C a derating factor of
−10
mW/°C should be
applied up to 300 mW.
2
2007-10-01
TC74AC86P/F/FN/FT
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dV
Rating
2.0 to 5.5
0 to V
CC
0 to V
CC
−40
to 85
0 to 100 (V
CC
= 3.3 ± 0.3 V)
0 to 20 (V
CC
= 5 ± 0.5 V)
Unit
V
V
V
°C
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Ta = 25°C
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
High-level input
voltage
V
IH
―
3.0
5.5
2.0
Low-level input
voltage
V
IL
―
3.0
5.5
2.0
I
OH
=
−50 μA
High-level output
voltage
V
OH
V
IN
= V
IH
or
I
OH
=
−4
mA
V
IL
I
OH
=
−24
mA
I
OH
=
−75
mA
(Note)
3.0
4.5
3.0
4.5
5.5
2.0
I
OL
= 50
μA
Low-level output
voltage
V
OL
V
IN
= V
IH
or
I
OL
= 12 mA
V
IL
I
OL
= 24 mA
I
OL
= 75 mA
Input leakage
current
Quiescent supply
current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
(Note)
3.0
4.5
3.0
4.5
5.5
5.5
5.5
Min
1.50
2.10
3.85
―
―
―
1.9
2.9
4.4
2.58
3.94
―
―
―
―
―
―
―
―
―
Typ.
―
―
―
―
―
―
2.0
3.0
4.5
―
―
―
0.0
0.0
0.0
―
―
―
―
―
Max
―
―
―
0.50
0.90
1.65
―
―
―
―
―
―
0.1
0.1
0.1
0.36
0.36
―
±0.1
4.0
Ta =
−40
to 85°C
Min
1.50
2.10
3.85
―
―
―
1.9
2.9
4.4
2.48
3.80
3.85
―
―
―
―
―
―
―
―
Max
―
―
―
0.50
0.90
1.65
―
―
―
―
―
―
0.1
0.1
0.1
0.44
0.44
1.65
±1.0
40.0
μA
μA
V
V
V
V
Unit
Note:
This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
3
2007-10-01
TC74AC86P/F/FN/FT
AC Characteristics
(C
L
= 50 pF, R
L
= 500
Ω,
input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
t
pLH
t
pHL
C
IN
C
PD
Test Condition
V
CC
(V)
Propagation delay
time
Input capacitance
Power dissipation
capacitance
―
―
(Note)
3.3 ± 0.3
5.0 ± 0.5
Min
―
―
―
―
Ta = 25°C
Typ.
7.6
5.6
5
56
Max
12.3
8.3
10
―
Ta =
−40
to 85°C
Min
1.0
1.0
―
―
Max
14.0
9.5
10
―
ns
pF
pF
Unit
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/4 (per gate)
4
2007-10-01
TC74AC86P/F/FN/FT
Package Dimensions
Weight: 0.96 g (typ.)
5
2007-10-01
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