EEWORLDEEWORLDEEWORLD

Part Number

Search

DF5A8.2LF

Description
8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size168KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

DF5A8.2LF Overview

8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF5A8.2LF Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSOD
package instructionR-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance60 Ω
JESD-30 codeR-PDSO-G5
JESD-609 codee0
Number of components4
Number of terminals5
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance4.878%
Working test current5 mA
Base Number Matches1
DF5A8.2LF
TOSHIBA Diodes for Protecting against ESD
DF5A8.2LF
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low Terminal capacitance (between Cathode and Anode)
: C
T
= 5.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
−55
~ 125
Unit
mW
°C
°C
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
1-3H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.014 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
Typ.
8.2
5.0
Max
8.6
60
100
0.5
Unit
V
Ω
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
6 kV
Criterion: No damage to device elements
1
2007-11-21
0.16

DF5A8.2LF Related Products

DF5A8.2LF DF5A8.2LF_07
Description 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2497  635  92  2559  2133  51  13  2  52  43 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号