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DF5A8.2LF_07

Description
8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size168KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF5A8.2LF_07 Overview

8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF5A8.2LF
TOSHIBA Diodes for Protecting against ESD
DF5A8.2LF
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low Terminal capacitance (between Cathode and Anode)
: C
T
= 5.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
−55
~ 125
Unit
mW
°C
°C
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
1-3H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.014 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
Typ.
8.2
5.0
Max
8.6
60
100
0.5
Unit
V
Ω
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
6 kV
Criterion: No damage to device elements
1
2007-11-21
0.16

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DF5A8.2LF_07 DF5A8.2LF
Description 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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