Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NEC Electronics |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 143 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 450 V |
| Maximum drain current (ID) | 10 A |
| Maximum drain-source on-resistance | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 40 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SK2365 | 2SK2365-Z | |
|---|---|---|
| Description | Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN |
| Maker | NEC Electronics | NEC Electronics |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant | unknown |
| Is Samacsys | N | N |
| Avalanche Energy Efficiency Rating (Eas) | 143 mJ | 143 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 450 V | 450 V |
| Maximum drain current (ID) | 10 A | 10 A |
| Maximum drain-source on-resistance | 0.5 Ω | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 40 A | 40 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
京公网安备 11010802033920号
EEWORLD
