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2SK2365-Z

Description
Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
CategoryThe transistor   
File Size285KB,6 Pages
ManufacturerNEC Electronics
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2SK2365-Z Overview

Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

2SK2365-Z Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSFM
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)143 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SK2365-Z Related Products

2SK2365-Z 2SK2365
Description Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Power Field-Effect Transistor, 10A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Maker NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
Is Samacsys N N
Avalanche Energy Efficiency Rating (Eas) 143 mJ 143 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 450 V 450 V
Maximum drain current (ID) 10 A 10 A
Maximum drain-source on-resistance 0.5 Ω 0.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 40 A 40 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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