TC74HC42AP/AF/AFN
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC42AP,TC74HC42AF,TC74HC42AFN
BCD to Decimal Decoder
The TC74HC42A is a high speed CMOS BCD-to-DECIMAL
DECODER fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
A BCD code applied to the four inputs (A-D) sets a low level at
one of ten decoded outputs. A illegal BCD code such as eleven
thru fifteen sets all outputs high. This device can be used as
3-to-8 LINE DECODER when input D is held low.
This device is useful for code conversion, address decoding,
memory selection, multiplexing, or readout decoding.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC42AP
TC74HC42AF
Features
•
•
•
•
•
•
•
•
High speed: t
pd
= 13 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4
μA
(max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
OH
| = I
OL
= 4 mA (min)
∼
Balanced propagation delays: t
pLH
−
t
pHL
Wide operating voltage range: V
CC
(opr) = 2~6 V
Pin and function compatible with 74LS42
TC74HC42AFN
Pin Assignment
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
SOL16-P-150-1.27
: 1.00 g (typ.)
: 0.18 g (typ.)
: 0.13 g (typ.)
1
2007-10-01
TC74HC42AP/AF/AFN
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−
0.5~7
−
0.5~V
CC
+
0.5
−
0.5~V
CC
+
0.5
±
20
±
20
±
25
±
50
Unit
V
V
V
mA
mA
mA
mA
mW
°C
500 (DIP) (Note 2)/180 (SOP)
−
65~150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
2~6
0~V
CC
0~V
CC
−
40~85
Unit
V
V
V
°C
0~1000 (V
CC
=
2.0 V)
Input rise and fall time
t
r
, t
f
0~500 (V
CC
=
4.5 V)
0~400 (V
CC
=
6.0 V)
ns
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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2007-10-01
TC74HC42AP/AF/AFN
AC Characteristics
(C
L
=
50 pF, input: t
r
=
t
f
=
6 ns)
Test Condition
Characteristics
Symbol
V
CC
(V)
2.0
⎯
Ta
=
25°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
= −
40~85°C
Max
75
15
13
145
29
25
10
⎯
Typ.
30
8
7
48
16
14
5
68
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
95
19
16
180
36
31
10
⎯
Unit
Output transition time
t
TLH
t
THL
t
pLH
t
pHL
C
IN
C
PD
(Note)
4.5
6.0
2.0
ns
Propagation delay
time
Input capacitance
Power dissipation
capacitance
⎯
4.5
6.0
⎯
⎯
ns
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
5
2007-10-01
Embedded System
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