SSM3K02T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02T
High Speed Switching Applications
•
•
•
Small package
Low on resistance: R
on
= 200 mΩ (max) (V
GS
= 4 V)
: R
on
= 250 mΩ (max) (V
GS
= 2.5 V)
Low gate threshold voltage: V
th
= 0.6~1.1 V (V
DS
= 3 V, I
D
= 0.1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
±10
2.5
5.0
1250
150
−55~150
Unit
V
V
A
mW
°C
°C
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
JEDEC
JEITA
―
―
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-3S1A
high temperature/current/voltage and the significant change in
Weight: 0.01 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu pad: 645 mm , t
=
10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KU
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM3K02T
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
⎪Y
fs
⎪
R
DS (ON)
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
GS
= ±10
V, V
DS
=
0
I
D
=
1 mA, V
GS
=
0
V
DS
=
30 V, V
GS
=
0
V
DS
=
3 V, I
D
=
0.1 mA
V
DS
=
3 V, I
D
=
1.25 A
I
D
=
1.25 A, V
GS
=
4 V
I
D
=
1.25 A, V
GS
=
2.5 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DD
=
15 V, I
D
=
0.5 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
(Note)
(Note)
(Note)
Min
⎯
30
⎯
0.6
2.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
140
180
115
24
60
52
80
Max
±5
⎯
1
1.1
⎯
200
250
⎯
⎯
⎯
⎯
⎯
Unit
μA
V
μA
V
S
mΩ
pF
pF
pF
ns
Note: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100
μA
for this
product. For normal switching operation, V
GS (ON)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
.
(Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (ON)
)
Please take this into consideration for using the device.
2
2007-11-01
SSM3K02T
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN GENERAL
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
stm32/stm8
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