TL(RE,RME,SE,OE,YE,GE)27C(F)
.
TOSHIBA InGaAℓP LED
TLRE27C(F),TLRME27C(F),TLSE27C(F),
TLOE27C(F),TLYE27C(F),TLGE27C(F)
Panel Circuit Indicator
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
Elliptical lens: Colored transparent lens
InGaAℓP technology
All plastic mold type
High intensity light emission
Excellent low current light output
Applications: Outdoor message signboards, full color panel, backlight
Unit in mm
Lineup
Product
Name
TLRE27C(F)
TLRME27C(F)
TLSE27C(F)
TLOE27C(F)
TLYE27C(F)
TLGE27C(F)
Color
Red
Red
Red
Orange
Yellow
Green
InGaAℓP
Material
JEDEC
JEITA
TOSHIBA
Weight: 0.3g(Typ.)
―
―
4-5AP1
Absolute Maximum Ratings
(Ta = 25°C)
Product
Name
TLRE27C(F)
TLRME27C(F)
TLSE27C(F)
TLOE27C(F)
TLYE27C(F)
TLGE27C(F)
Forward
Current
I
F
(mA)
50
50
50
50
50
50
Reverse
Voltage
V
R
(V)
4
4
4
4
4
4
Power
Dissipation
P
D
(mW)
120
120
120
120
120
120
Operating
Temperature
T
opr
(°C)
−40~100
−40~100
−40~100
−40~100
−40~100
−40~100
Storage
Temperature
T
stg
(°C)
−40~120
−40~120
−40~120
−40~120
−40~120
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
Electrical and Optical Characteristics
(Ta = 25°C)
Product
Name
λ
d
TLRE27C(F)
TLRME27C(F)
TLSE27C(F)
TLOE27C(F)
TLYE27C(F)
TLGE27C(F)
Unit
630
626
613
605
587
571
Typ. Emission
Wavelength
λ
p
(644)
(636)
(623)
(612)
(590)
(574)
nm
Δλ
20
23
20
20
17
17
I
F
20
20
20
20
20
20
mA
Min
85
153
272
272
272
85
mcd
Luminous
Intensity
I
V
Typ.
300
400
750
800
650
250
Forward
Voltage
V
F
Max
2.4
2.4
2.4
2.4
2.4
2.4
V
Reverse
Current
I
R
Max
V
R
50
50
50
50
50
50
μA
4
4
4
4
4
4
V
I
F
20
20
20
20
20
20
mA
Typ.
1.9
1.9
1.9
2.0
2.0
2.0
I
F
20
20
20
20
20
20
mA
Precautions
•
•
•
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(Soldering portion of lead: below the lead stopper of the device)
If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLRE27C(F)
I
F
– V
F
100
50
Ta = 25 °C
3000
Ta = 25 °C
I
V
– I
F
Luminous intensity IV (mcd)
(mA)
1000
30
Forward current IF
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
1.0
Relative Luminous Intensity -
Wavelength
IF = 20mA
Ta = 25 °C
Relative luminous intensity IV
5
3
Relative luminous intensity
0.8
0.6
1
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
80
Ta = 25
°C
I
F
– Ta
Allowable forward current
IF (mA)
60
V
H
30°
40°
50°
20°
10°
0° 10°
20°
30°
H
40°
V
50°
60°
70°
80°
40
60°
70°
80°
90°
0
0.2
0.4
0.6
0.8
20
90°
1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLRME27C(F)
I
F
– V
F
100
50
Ta = 25 °C
10000
Ta = 25 °C
I
V
– I
F
30
Luminous intensity IV (mcd)
(mA)
Forward current IF
1000
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
1.0
Relative Luminous Intensity -
Wavelength
IF = 20mA
Ta = 25 °C
Relative luminous intensity IV
5
3
Relative luminous intensity
0.8
0.6
1
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
80
Ta = 25
°C
I
F
– Ta
Allowable forward current
IF (mA)
60
V
H
30°
40°
50°
20°
10°
0° 10°
20°
30°
H
40°
V
50°
60°
70°
80°
40
60°
70°
80°
90°
0
0.2
0.4
0.6
0.8
20
90°
1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLSE27C(F)
I
F
– V
F
100
50
Ta = 25 °C
10000
Ta = 25 °C
I
V
– I
F
30
Luminous intensity IV (mcd)
(mA)
Forward current IF
1000
10
5
3
100
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
1
10
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
3
1.0
Relative Luminous Intensity -
Wavelength
IF = 20mA
Ta = 25 °C
Relative luminous intensity IV
1
Relative luminous intensity
0.8
0.6
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
560
580
600
620
640
660
680
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
80
Ta = 25
°C
I
F
– Ta
Allowable forward current
IF (mA)
60
V
H
30°
40°
50°
20°
10°
0° 10°
20°
30°
H
40°
V
50°
60°
70°
80°
40
60°
70°
80°
90°
0
0.2
0.4
0.6
0.8
20
90°
1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2007-10-01
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