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RB751SL

Description
Schottky Barrier Diodes
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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RB751SL Overview

Schottky Barrier Diodes

RB751SL Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOD-923F
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging code2LD,SOD923F, 0.4MM TALL, FLAT TERMINAL
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.2 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.227 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.008 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RB751SL — Schottky Barrier Diodes
December 2007
RB751SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6 mm
Connection Diagram
1
2
2
SOD-923
Marking: AD
1
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
P
D
T
J,
T
STG
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Forward Surge Current
( 8.3mS Single Half Sine-Wave)
Power Dissipation
Operating Junction & Storage Temperature Range
Value
30
30
200
227
-55 to +150
Unit
V
mA
mA
mW
°C
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
R
θJA
* Minimum land pad.
Parameter
Thermal Resistance, Junction to Ambient
*
Value
550
Unit
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
trr
C
j
T
A
=25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Reverse Recovery Time
Junction Capacitance
Test Conditions
I
R
= 10μA
I
F
= 1mA
V
R
= 30V
I
F
= I
R
= 10mA, irr= 0.1I
R
V
R
= 1V, f = 1.0MHz
Min.
30
Max.
370
0.5
8.0
2.5
Unit
V
mV
μA
nS
pF
© 2007 Fairchild Semiconductor Corporation
RB751SL Rev. 1.0.0
1
www.fairchildsemi.com
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