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RJN1163

Description
Electret Capacitor Microphone Applications
File Size171KB,4 Pages
ManufacturerETC
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RJN1163 Overview

Electret Capacitor Microphone Applications

N-Channel Junction FET
RJN1163
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio and
telephone electret capacitor microphones
Excellent voltage gain
Very low noise
High ESD voltage
Ultra-small size package
Package Type : SOT-300
[unit:mm]
1.60
±0.05
0.31
±0.03
0.12
±0.03
3
1.40
±0.01
0.80
±0.05
0~0.02
Applications
Cellular phones
Portable audio
PDAs
MP3 players
1
0.21
±0.03
0.5
±0.05
2
0.21
±0.03
0.5
±0.05
MAX 0.34
[TOP VIEW]
[SIDE VIEW]
1. Drain
2. Source
3. Gate
Absolute Maximum Ratings at Ta = 25
o
C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
GDO
I
G
I
D
P
D
Tj
Tstg
Ratings
-20
10
10
100
150
-55 to +150
Unit
V
mA
mA
mW
o
o
C
C
Electrical Characteristics at Ta = 25
o
C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)GDO
V
GS(off)
I
DSS
|yfs|
Ciss
Crss
Conditions
I
G
= -100µA
V
DS
= 5V, I
D
= 1µA
V
DS
= 5V, V
GS
= 0
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
Min
-20
-0.2
70*
0.4
Ratings
Typ
Max
-0.6
1.2
3.5
0.8
-1.5
430*
Unit
V
V
µA
mS
pF
pF
* The RJN1163 is classified by I
DSS
as follows
Classification
A1
I
DSS
(µA)
70~120
A2
100~170
B
150~270
C
210~350
D
320~430
RFsemi Technologies, Inc.
Rev. 4
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