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1N4004G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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1N4004G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

1N4004G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1 A
1N4001G THRU 1N4007G
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· High current capability
· Low reverse leakage
· Glass passivated junction
· Low forward voltage drop
· High temperature soldering guaranteed : 350℃/10 seconds,
0.375"(9.5mm) lead length, 5 lbs, (2.3kg) tension
CURRENT 1.0 Ampere
VOLTAGE 50 to 1300 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=75℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
JA
JL
C
J
T
J
T
STG
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1N
4001G
50
35
50
1N
4002G
100
70
100
1N
4003G
200
140
200
1N
4004G
400
280
400
1.0
30.0
1.1
5.0
50.0
50.0
25.0
15.0
-65 to +175
1N
4005G
600
420
600
1N
4006G
800
560
800
1N
4007G
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
℃/W
pF
Typical thermal resistance (Note 1)
Typical junction capacitance (Note 2)
Operating and storage temperature range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted

1N4004G Related Products

1N4004G 1N4002G 1N4003G
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE SIGNAL DIODE
state DISCONTINUED ACTIVE ACTIVE
Diode type Signal diode SIGNAL DIODE Signal diode
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