PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -12V
* 4 Amp Continuous Current
* 20 Amp pulse Current
* Low Saturation Voltage
* High Gain
ZTX1147A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-15
-12
-5
-20
-4
-500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
ZTX1147A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
VALUE
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
MIN.
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
-15
-12
-12
-12
-5
TYP.
-35
-25
-25
-25
-8.5
-0.3
-0.3
-0.3
-25
-70
-90
-115
-175
-890
-830
270
250
200
170
90
450
400
340
270
150
50
115
80
150
220
-100
-100
-100
-50
-110
-130
-170
-235
-1000
-950
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA
I
C
=-100µA, V
EB
=+1V
I
E
=-100µA
V
CB
=-12V
V
EB
=-4V
V
CE
=-10V
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-4A, I
B
=-70mA*
I
C
=-4A, I
B
=-70mA*
I
C
=-4A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2.0A, V
CE
=-2V*
I
C
=-4.0A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
I
CBO
I
EBO
I
CES
V
CE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
850
Transition Frequency
Out Capacitance
Switching Times
f
T
C
cb
t
on
t
off
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
I
C
=-4A, I
B
=±40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ZTX1147A
Transiant Thermal Resistance ( C/W)
180
160
140
120
100
80
D=0.2
D=0.5
tp
D=t1
tp
t1
1.0
Max Power Dissipation - (Watts)
D=1(D.C)
0.75
Am
tt
en
bi
em
0.50
ra
pe
tu
60
40
20
0
D=0.1
D=0.05
Single Pulse
re
0.25
0.1ms
1ms
10ms
100ms
1s
10s
100s
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
* ZETEX ZTX1147 Spice model Last revision 10/12/96
*
.MODEL
ZTX1147 PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65
+
BF=500 VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6
+
BR=90 VAR=3.1 IKR=1.2 RE=15e-3 RB=145e-3
+
RC=13e-3 CJE=560e-12
+
CJC=255e-12 VJC=0.6288
+
MJC=0.4048 TF=1.2e-9 TR=13e-9
*
©
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Embedded System
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