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TSS54U

Description
Schottky Diodes & Rectifiers Schottky 150mW
CategoryDiscrete semiconductor    diode   
File Size223KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSS54U Overview

Schottky Diodes & Rectifiers Schottky 150mW

TSS54U Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-N2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-N2
JESD-609 codee4
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
TSS54U
Taiwan Semiconductor
Small Signal Product
Surface Mount Schottky Barrier
FEATURES
- Designed for mounting on small surface
- Extremely thin/leadless package
- Low capacitance
- Low forward voltage drop
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
0603
MECHANICAL DATA
- Case: 0603
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 3 mg (approximately)
- Marking code: BF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Repetitive Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rate Load
Power Dissipation
Forward Voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reverse Leakage Current
V
R
= 25 V
I
R
C
J
t
rr
T
J
T
STG
Typical Capacitance Between Terminals
V
R
= 1 V , f = 1.0 MHz Reverse Voltage
Reverse Recovery Time
( I
F
= I
R
= 10mA, I
RR
= 0.1×I
R
, R
L
=100Ω )
Junction Temperature
Storage Temperature
V
F
SYMBOL
V
RRM
V
R
V
R(RMS)
I
O
I
FRM
I
FSM
Pd
VALUE
30
30
21
200
300
600
150
0.24
0.32
0.40
0.50
1.00
2
10
5
-65 to +125
-65 to +125
μA
pF
ns
°C
°C
V
UNIT
V
V
V
mA
mA
mA
mW
Version: C1601

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