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TSS54U RG

Description
Schottky Diodes & Rectifiers Schottky 150mW
Categorysemiconductor    Discrete semiconductor   
File Size223KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSS54U RG Overview

Schottky Diodes & Rectifiers Schottky 150mW

TSS54U RG Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / Case0603
If - Forward Current100 mA
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage1 V
Ifsm - Forward Surge Current600 mA
ConfigurationSingle
TechnologySi
Ir - Reverse Current2 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 125 C
PackagingReel
Pd - Power Dissipation150 mW
Factory Pack Quantity4000
trr - Reverse Recovery time5 ns
Vr - Reverse Voltage30 V
TSS54U
Taiwan Semiconductor
Small Signal Product
Surface Mount Schottky Barrier
FEATURES
- Designed for mounting on small surface
- Extremely thin/leadless package
- Low capacitance
- Low forward voltage drop
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
0603
MECHANICAL DATA
- Case: 0603
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 3 mg (approximately)
- Marking code: BF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Repetitive Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rate Load
Power Dissipation
Forward Voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reverse Leakage Current
V
R
= 25 V
I
R
C
J
t
rr
T
J
T
STG
Typical Capacitance Between Terminals
V
R
= 1 V , f = 1.0 MHz Reverse Voltage
Reverse Recovery Time
( I
F
= I
R
= 10mA, I
RR
= 0.1×I
R
, R
L
=100Ω )
Junction Temperature
Storage Temperature
V
F
SYMBOL
V
RRM
V
R
V
R(RMS)
I
O
I
FRM
I
FSM
Pd
VALUE
30
30
21
200
300
600
150
0.24
0.32
0.40
0.50
1.00
2
10
5
-65 to +125
-65 to +125
μA
pF
ns
°C
°C
V
UNIT
V
V
V
mA
mA
mA
mW
Version: C1601

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