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BCP56-10T1G

Description
Bipolar Transistors - BJT 1A 100V NPN
CategoryDiscrete semiconductor    The transistor   
File Size68KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BCP56-10T1G Overview

Bipolar Transistors - BJT 1A 100V NPN

BCP56-10T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-261AA
package instructionHALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID224498
Samacsys Pin Count4
Samacsys Part CategoryTransistor
Samacsys Package CategorySOT223 (3-Pin)
Samacsys Footprint NameSOT-223 TP-261 CASE 318E-04
Samacsys Released Date2015-07-24 09:28:59
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
www.onsemi.com
High Current: 1.0 A
The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Collector Current − Peak (Note 1)
Total Power Dissipation
@ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
D
1.5
12
T
J
, T
stg
−65 to 150
W
mW/°C
°C
1
Value
80
100
5
1
2
Unit
Vdc
Vdc
Vdc
Adc
Adc
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
R
qJA
Max
83.3
Unit
°C/W
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
10
ORDERING INFORMATION
°C
Sec
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Reference SOA curve.
2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
©
Semiconductor Components Industries, LLC, 2016
1
March, 2018 − Rev. 14
Publication Order Number:
BCP56T1/D

BCP56-10T1G Related Products

BCP56-10T1G BCP56-16T3G NSVBCP56-10T3G
Description Bipolar Transistors - BJT 1A 100V NPN Bipolar Transistors - BJT 1A 100V NPN Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
package instruction HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN TO-261, 4 PIN
Manufacturer packaging code 0.0318 0.0318 0.0318
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week 8 weeks 8 weeks
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 63 100 63
JEDEC-95 code TO-261AA TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz 130 MHz
Base Number Matches 1 1 1
Maker ON Semiconductor - ON Semiconductor
Parts packaging code TO-261AA TO-261AA -
Contacts 4 4 -
Is Samacsys N - N
Minimum operating temperature -55 °C -55 °C -
Peak Reflow Temperature (Celsius) 260 260 -
Certification status Not Qualified Not Qualified -
Maximum time at peak reflow temperature 40 40 -
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