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BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
Product overview
Package
NXP
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
SOT457
SC-74
small
SOT363
JEITA
SC-88
very small
Package configuration
Type number
1.2 Features
I
I
I
I
Current gain matching
Base-emitter voltage matching
Drop-in replacement for standard double transistors
AEC-Q101 qualified
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−5
V;
I
C
=
−2
mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
−65
−100
450
Unit
V
mA
Per transistor
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Quick reference data
…continued
Parameter
h
FE
matching
V
BE
matching
Conditions
V
CE
=
−5
V;
I
C
=
−2
mA
V
CE
=
−5
V;
I
C
=
−2
mA
[1]
Table 2.
Symbol
Per device
h
FE1
/h
FE2
V
BE1
−V
BE2
Min
0.9
-
Typ
1
-
Max
-
2
Unit
[2]
mV
[1]
[2]
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
001aab555
sym018
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
1
2
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
2 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
4. Marking
Table 5.
Marking codes
Marking code
[1]
*BS
PB*
DS
R9
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
P
tot
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
T
j
T
amb
T
stg
[1]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
Max
−80
−65
−5
−100
−200
Unit
V
V
V
mA
mA
Per transistor
-
-
200
250
mW
mW
[1]
T
amb
≤
25
°C
[1]
-
-
-
−55
−65
300
380
150
+150
+150
mW
mW
°C
°C
°C
[1]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
3 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7.
Thermal characteristics
Conditions
in free air
[1]
Symbol Parameter
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
R
th(j-a)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]
Min
Typ
Max
Unit
-
-
-
-
625
500
K/W
K/W
[1]
in free air
[1]
-
-
-
-
416
328
K/W
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
=
−30
V;
I
E
= 0 A
V
CB
=
−30
V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off
current
DC current gain
V
EB
=
−5
V;
I
C
= 0 A
V
CE
=
−5
V;
I
C
=
−10 µA
V
CE
=
−5
V;
I
C
=
−2
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−100
mA;
I
B
=
−5
mA
V
BEsat
base-emitter saturation
voltage
I
C
=
−10
mA;
I
B
=
−0.5
mA
I
C
=
−100
mA;
I
B
=
−5
mA
[1]
Min
-
-
Typ
-
-
Max
−15
−5
Unit
nA
µA
Per transistor
-
-
200
-
-
-
-
-
250
290
−50
−200
−760
−920
−100
-
450
−200
−400
-
-
nA
mV
mV
mV
mV
[1]
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
4 of 14
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