BZT55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5 to 5
Pulse current
Single
UNIT
V
mA
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZT55-series
BZT55-series
ORDERING CODE
BZT55-series-GS18
BZT55-series-GS08
TAPED UNITS PER REEL
10 000 per 13" reel
2500 per 7" reel
MINIMUM ORDER QUANTITY
10 000/box
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
On PC board
50 mm x 50 mm x 1.6 mm
TEST CONDITION
R
thJA
300 K/W
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
V
/V
Z
500
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.7, 22-Nov-11
Document Number: 85637
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE LEAKAGE
CURRENT
I
R
at V
R
T
amb
=
25 °C
T
amb
=
150 °C
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
f = 1 kHz
MAX.
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
MIN.
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
TK
VZ
%/K
MAX.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
TEMPERATURE
COEFFICIENT
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
V
Z
at I
ZT1
V
MIN.
BZT55C2V4
BZT55C2V7
BZT55C3V0
BZT55C3V3
BZT55C3V6
BZT55C3V9
BZT55C4V3
BZT55C4V7
BZT55C5V1
BZT55C5V6
BZT55C6V2
BZT55C6V8
BZT55C7V5
BZT55C8V2
BZT55C9V1
BZT55C10
BZT55C11
BZT55C12
BZT55C13
BZT55C15
BZT55C16
BZT55C18
BZT55C20
BZT55C22
BZT55C24
BZT55C27
BZT55C30
BZT55C33
BZT55C36
BZT55C39
BZT55C43
BZT55C47
BZT55C51
BZT55C56
BZT55C62
BZT55C68
BZT55C75
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % V
zmin.
35 nA at T
j
25 °C
(1)
t
10 ms, T/t > 1000
p
p
Rev. 1.7, 22-Nov-11
Document Number: 85637
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE LEAKAGE
CURRENT
I
R
at V
R
T
amb
=
25 °C
T
amb
=
150 °C
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
TK
VZ
%/K
MAX.
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
MIN.
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
MAX.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
TEMPERATURE
COEFFICIENT
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
V
Z
at I
ZT1
V
MIN.
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1
BZT55B10
BZT55B11
BZT55B12
BZT55B13
BZT55B15
BZT55B16
BZT55B18
BZT55B20
BZT55B22
BZT55B24
BZT55B27
BZT55B30
BZT55B33
BZT55B36
BZT55B39
BZT55B43
BZT55B47
BZT55B51
BZT55B56
BZT55B62
BZT55B68
BZT55B75
2.35
2.64
2.94
3.24
3.52
3.82
4.22
4.6
5
5.48
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.76
3.06
3.36
3.68
3.98
4.38
4.8
5.2
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
f = 1 kHz
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % V
zmin.
35 nA at T
j
25 °C
(1)
t
10 ms, T/t > 1000
p
p
Rev. 1.7, 22-Nov-11
Document Number: 85637
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
600
500
400
300
200
100
0
0
95 9602
Vishay Semiconductors
P
tot
- Total Power Dissipation (mW)
15
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
10
5
I
Z
= 5 mA
0
-5
80
120
160
40
T
amb
- Ambient Temperature (°C)
200
95 9600
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
Fig. 1 -
Total Power Dissipation vs. Ambient Temperature
Fig. 4 -
Temperature Coefficient of V
Z
vs. Z-Voltage
1000
200
T
j
= 25 °C
100
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
150
V
R
= 2
V
T
j
= 25 °C
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 2 -
Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 5 -
Diode Capacitance vs. Z-Voltage
1.3
100
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
I
F
- Forward Current (mA)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
10
1.1
1
T
j
= 25 °C
1.0
0.9
0
- 2 x 10 /K
- 4 x 10
-4
/K
-4
0.1
0.01
0.8
- 60
95 9599
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 3 -
Typical Change of Working Voltage vs. Junction
Temperature
Fig. 6 -
Forward Current vs. Forward Voltage
Rev. 1.7, 22-Nov-11
Document Number: 85637
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
1000
100
80
r
Z
- Differential Z-Resistance (Ω)
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
I
Z
= 1 mA
100
5 mA
10 10 mA
40
20
0
0
95 9604
1
4
6
8
12
20
95 9606
T
j
= 25 °C
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 7 -
Z-Current vs. Z-Voltage
Fig. 9 -
Differential Z-Resistance vs. Z-Voltage
50
P
tot
= 500 mW
T
amb
= 25 °C
40
I
Z
- Z-Current (mA)
30
20
10
0
15
95 9607
20
25
30
35
V
Z
- Z-Voltage (V)
Fig. 8 -
Z-Current vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
jmax
- T
amb
t
p
/T = 0.01
t
p
/T = 0.1
t
p
/T = 0.02
i
ZM
= (-
V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T = 0.05
10
1
10
-1
10
0
10
1
t
p
- Pulse Length (ms)
10
2
95 9603
Fig. 10 - Thermal Response
Rev. 1.7, 22-Nov-11
Document Number: 85637
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Analog electronics
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