This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TP2635
Package Option
TO-92
TP2635N3-G
BV
DSS
/BV
DGS
(max)
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
I
D(ON)
(min)
(A)
-350
15
-2.0
-0.7
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
DRAIN
SOURCE
GATE
TO-92 (N3)
Product Marking
SiTP
263 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
1
TP2635
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
†
I
DRM
(A)
-180
-0.8
1.0
125
170
-180
-0.8
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Min
-350
-0.8
-
-
Typ
-
-
-
Max
-
-2.0
5
-100
-1.0
-10.0
-1.0
Units
V
V
mV/
O
C
nA
µA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= -100V
V
GS
= 0V, V
DS
= Max rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -10V, V
DS
= -25V
V
GS
= -2.5V, I
D
= -20mA
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -300mA
V
GS
= -10V, I
D
= -300mA
V
DS
= -25V, I
D
= -300mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -300mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -200mA
V
GS
= 0V, I
SD
= -200mA
I
DSS
Zero gate voltage drain current
-
-
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-0.7
-
-
200
-
-
-
-
-
-
-
-
-
-
12
11
11
-
-
-
-
-
-
-
-
-
-
300
-
15
15
15
0.75
-
300
50
12
10
15
60
40
-1.8
-
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
INPUT
-10V
PULSE
GENERATOR
R
GEN
t
f
INPUT
t
(ON)
t
d(ON)
0V
t
r
t
d(OFF)
D.U.T.
Output
R
L
10%
OUTPUT
V
DD
90%
10%
90%
V
DD
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TP2635
Typical Performance Curves
Output Characteristics
-2.0
Saturation Characteristics
-1.0
V
GS
= -10V
-8V
-6V
-8V
-0.8
-1.6
-6V
V
GS
= -10V
I
D
(amperes)
-4V
-0.8
I
D
(amperes)
-1.2
-0.6
-4V
-0.4
-3V
-0.2
-0.4
-3V
0
0
-10
-20
0
V
DS
(volts)
-30
-40
-50
0
-2
-4
-6
-8
-10
V
DS
(volts)
Power Dissipation vs. Temperature
2.0
Transconductance vs. Drain Current
1.0
0.8
1.6
G
FS
(siemens)
V
DS
= -25V
P
D
(watts)
0.6
1.2
TO-92
0.4
T
A
= -55°C
0.8
0.2
125°C
0
0
-0.4
-0.8
-1.2
25°C
0.4
-1.6
-2.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
-10
1.0
T
C
(° C)
Thermal Response Characteristics
Thermal Resistance (normalized)
-1.0
TO-92 (pulsed)
0.8
I
D
(amperes)
0.6
-0.1
TO-92 (DC)
0.4
-0.01
T
C
= 25°C
-0.001
0.2
TO-92
TC = 25°C
PD = 1.0W
-1
-10
-100
-1000
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TP2635
Typical Performance Curves (cont.)
BV
DSS
Variation with Temperature
30
1.1
24
On-Resistance vs. Drain Current
V
GS
= -2.5V
BV
DSS
(normalized)
V
GS
= -4.5V
R
DS(ON)
(ohms)
18
1.0
12
V
GS
= -10V
6
0.9
0
-50
0
50
100
150
0
-0.4
-0.8
-1.2
-1.6
-2.0
T
j
(° C)
Transfer Characteristics
-2.0
I
D
(amperes)
V
TH
and R
DS
Variation with Temperature
2.5
V
DS
= -25V
-1.6
1.2
V
(th)
@ -1mA
V
GS(th)
(normalized)
I
D
(amperes)
-1.2
T
A
= -55°C
25°C
1.0
1.5
0.8
1.0
-0.8
0.6
R
DS(ON)
@ -10V, -0.3A
0.5
-0.4
0.4
0
0
-2
-4
-6
-8
-10
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
400
-10
T
j
(° C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
300
C (picofarads)
678pF
V
GS
(volts)
C
ISS
200
-6
V
DS
= -10V
-4
V
DS
= -40V
100
C
OSS
0
0
-10
-20
-30
-2
C
RSS
-40
263pF
0
0
1
2
3
4
5
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
+125°C
2.0
TP2635
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
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