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BAV99C_15

Description
SILICON EPITAXIAL PLANAR DIODE
File Size346KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

BAV99C_15 Overview

SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
・Small
Package : SOT-23(1).
L
BAV99C
SILICON EPITAXIAL PLANAR DIODE
E
B
L
2
A
G
3
1
C
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
I
F
I
FSM
P
D
T
j
T
stg
RATING
80
100
1
225*
150
-55½150
UNIT
V
DIM
A
B
C
D
E
G
J
K
L
M
N
MILLIMETERS
_
2.90 + 0.1
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.10
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
K
M
3
mA
A
mW
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
2
1
SOT-23(1)
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
Marking
Lot No.
Type Name
H8C
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
SYMBOL
V
R
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
TEST CONDITION
I
R
=100uA
I
F
=1mA
I
F
=10mA
I
F
=150mA
V
R
=80V
V
R
=0, f=1MHz
MIN.
80
-
-
-
-
-
TYP.
-
0.61
0.74
-
-
-
MAX.
-
0.65
0.8
1.25
0.5
4
μ
A
pF
V
UNIT
V
2015. 5. 12
Revision No : 0
J
D
1/2
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