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BUH51G

Description
Bipolar Transistors - BJT 3A 800V 50W NPN
CategoryDiscrete semiconductor    The transistor   
File Size184KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUH51G Overview

Bipolar Transistors - BJT 3A 800V 50W NPN

BUH51G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225AA
package instructionCASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)3 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)23 MHz
BUH51
SWITCHMODEt NPN Silicon
Planar Power Transistor
The BUH51 has an application specific state−of−art die designed for
use in 50 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
http://onsemi.com
Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Machine Model, C
Human Body Model, 3B
POWER TRANSISTOR
3.0 AMPERE
800 VOLTS
50 WATTS
w
This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
3
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
CM
I
BM
P
D
T
J
, T
stg
I
B
I
C
Value
500
800
800
10
3.0
8.0
2.0
4.0
50
0.4
– 65 to
150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
Y
WW
2 1
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Base Current
Peak (Note 1)
*Total Device Dissipation @ T
C
= 25_C
*Derate above 25°C
Operating and Storage Temperature
TO−225
CASE 77
STYLE 3
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
BUH51
= Year
= Work Week
ORDERING INFORMATION
Device
BUH51
Package
TO−225
Shipping
500 Units/Box
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
R
θJC
R
θJA
T
L
2.5
100
260
_C/W
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 5
1
Publication Order Number:
BUH51/D

BUH51G Related Products

BUH51G BUH51
Description Bipolar Transistors - BJT 3A 800V 50W NPN Bipolar Transistors - BJT 3A 800V 50W NPN
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-225AA TO-225AA
package instruction CASE 77-09, 3 PIN CASE 77-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 77-09 77-09
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 500 V 500 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 5
JEDEC-95 code TO-225AA TO-225AA
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 50 W 50 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 23 MHz 23 MHz
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