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PMF170XP,115

Description
MOSFET P-CH -20 V -1 A
CategoryDiscrete semiconductor    The transistor   
File Size698KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMF170XP,115 Overview

MOSFET P-CH -20 V -1 A

PMF170XP,115 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompliant
PMF170XP
29 October 2013
20 V, 1 A P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low R
DSon
Very fast switching
Trench MOSFET technology
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
25 °C
V
GS
= -4.5 V; I
D
= -1 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
-20
12
-1
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
175
200
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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