TISP4C115H3BJ THRU TISP4C350H3BJ
*R
oH
S
CO
M
PL
IA
NT
LOW CAPACITANCE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CxxxH3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
Device Name
TISP4C115H3BJ †
TISP4C125H3BJ †
TISP4C145H3BJ †
TISP4C165H3BJ
TISP4C180H3BJ †
TISP4C220H3BJ †
TISP4C250H3BJ †
TISP4C290H3BJ †
TISP4C350H3BJ †
V
DRM
V
90
100
120
135
145
180
190
220
275
V
(BO)
V
115
125
145
165
180
220
250
290
350
MD-SMB-004-a
SMB Package (Top View)
R 1
2 T
Device Symbol
T
R
Rated for International Surge Wave Shapes
Wave Shape
2/10
10/160
10/700
10/560
10/1000
Standard
GR-1089-CORE
TIA-968-A
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
I
PPSM
A
500
200
150
100
100
SD-TISP4xxx-001-a
...................................................... UL Recognized Component
Description
This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash
disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for
the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
helps
prevent d.c. latchup
as the
diverted current subsides.
Please contact your Bourns representative if the protection voltage you require is not listed.
How to Order
Marking
Code
4CxxxH
Device
TISP4CxxxH3BJ
Package
SMB
Carrier
Embossed Tape Reeled
Order As
TISP4CxxxH3BJR-S
Std. Qty.
3000
Insert xxx corresponding to device name.
SEPTEMBER 2004 – REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Rating
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
Symbol
Value
±90
±100
±120
±135
±145
±180
±190
±220
±275
±500
±200
±150
±100
±100
30
2.1
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage
V
DRM
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10
μs
(GR-1089-CORE, 2/10
μs
voltage wave shape)
10/160
μs
(TIA-968-A, 10/160
μs
voltage wave shape)
5/310
μs
(ITU-T K.44, 10/700
μs
voltage wave shape used in K.20/21/45)
10/560
μs
(TIA-968-A, 10/560
μs
voltage wave shape)
10/1000
μs
(GR-1089-CORE, 10/1000
μs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature
Storage temperature range
I
TSM
T
J
T
stg
A
°C
°C
I
PPSM
A
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25
°C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
Min
Typ
Max
±5
±10
±115
±125
±145
±165
±180
±220
±250
±290
±350
±125
±135
±155
±175
±190
±230
±260
±300
±360
±600
±3
±150
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
±600
50
Unit
μA
V
(BO)
Breakover voltage
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover voltage
dv/dt
≤ ±1000
V/μs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±10
A/μs, Linear current ramp,
Maximum ramp value =
±10
A
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A,t
w
= 100
μs
I
T
=
±5
A, di/dt =
±30
mA/ms
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
mA
V
mA
C
O
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
45
pF
40
SEPTEMBER 2004 – REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Thermal Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 4)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
NOTE:
50
Min
Typ
Max
113
°C/W
Unit
R
θJA
Junction to ambient thermal resistance
4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
I
TRM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
(BO)
I
(BO)
V
(BR)
I
(BR)
V
DRM
V
(BR)M
+v
I
DRM
V
(BO)
V
T
I
T
I
TRM
Quadrant III
Switching
Characteristic
-i
I
TSM
I
PPSM
PM-TISP4xxx-001-a
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
SEPTEMBER 2004 – REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
TISP4xxxF3LM
Typical Characteristics
1.1
1.0
Capacitance Normalized to V
D
= 2 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC-TISP4C-002-a
T
J
= 25
°C
V
d
= 1 Vrms
10
V
D
- Off-state Voltage - V
100
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2004 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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