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MR824

Description
5 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size117KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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MR824 Overview

5 A, 400 V, SILICON, RECTIFIER DIODE

MR824 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationFAST RECOVERY POWER
Phase1
Maximum reverse recovery time0.3000 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current5 A
Maximum non-repetitive peak forward current300 A
MR820 THRU MR828
Features
· Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
· Fast switching speed
· Diffused junction
· High current capability
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5 lbs.(2.3kg) tension.
CURRENT 5.0 Amperes
VOLTAGE 50 to 800 Volts
P-6
0.360(9.1)
0.340(8.6)
DIA.
1.0(25.4)
MIN.
0.360(9.1)
0.340(8.6)
Mechanical Data
· Case : P-6 molded plastic body
· Terminals : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.07 ounce, 2.1 grams
0.052(1.3)
0.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 5.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJA
C
J
T
J
T
STG
MR820 MR821 MR822 MR824 MR826 MR828
50
35
50
100
70
100
200
140
200
5.0
300.0
1.1
10
100
120
10
300
-55 to +150
400
280
400
600
420
600
800
560
800
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
ns
℃/W
pF
Maximum reverse recovery time (Note 1)
Maximum thermal resistance
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

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Description 5 A, 400 V, SILICON, RECTIFIER DIODE 5 A, 50 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE
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