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NTD14N03RG

Description
MOSFET 25V 14A N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size114KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTD14N03RG Overview

MOSFET 25V 14A N-Channel

NTD14N03RG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionROHS COMPLIANT, CASE 369C, DPAK-3
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
Factory Lead Time1 week
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)11.4 A
Maximum drain current (ID)11.4 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20.8 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTD14N03R, NVD14N03R
Power MOSFET
14 Amps, 25 Volts
N−Channel DPAK
Features
http://onsemi.com
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
14 AMPERES, 25 VOLTS
R
DS(on)
= 70.4 mW (Typ)
N−CHANNEL
D
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Thermal Resistance
Junction−to−Case
Total Power Dissipation @ T
A
= 25°C
Drain Current
Continuous @ T
A
= 25°C, Chip
Continuous @ T
A
= 25°C, Limited by Package
Single Pulse (tp
10
ms)
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
Continuous @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
I
D
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
T
L
Value
25
±20
6.0
20.8
14
11.4
28
80
1.56
3.1
120
1.04
2.5
−55
to
150
260
Unit
Vdc
Vdc
°C/W
W
A
A
A
°C/W
W
A
°C/W
W
A
°C
°C
1
Gate
1 2
3
1
2
4
4
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
CASE 369D
DPAK−3
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
YWW
T14
N03G
4 Drain
YWW
T14
N03G
3
Source
1
Gate
2
Drain
3
Source
Publication Order Number:
NTD14N03R/D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
2
Drain
Y
WW
14N03
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
February, 2012
Rev. 7
1

NTD14N03RG Related Products

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Description MOSFET 25V 14A N-Channel MOSFET 25V 14A N-Channel MOSFET 25V 14A N-Channel MOSFET 25V 14A N-Channel
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction ROHS COMPLIANT, CASE 369C, DPAK-3 CASE 369C, DPAK-3 CASE 369D-01, DPAK-3 CASE 369C, DPAK-3
Contacts 3 3 3 3
Manufacturer packaging code 369C CASE 369C CASE 369D-01 CASE 369C
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V 25 V 25 V
Maximum drain current (Abs) (ID) 11.4 A 11.4 A 11.4 A 11.4 A
Maximum drain current (ID) 11.4 A 11.4 A 11.4 A 11.4 A
Maximum drain-source on-resistance 0.13 Ω 0.13 Ω 0.13 Ω 0.13 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e0 e0 e0
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 2 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 235 235 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 20.8 W 20.8 W 20.8 W 20.8 W
Maximum pulsed drain current (IDM) 28 A 28 A 28 A 28 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO YES
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? - incompatible incompatible incompatible
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