NTD14N03R, NVD14N03R
Power MOSFET
14 Amps, 25 Volts
N−Channel DPAK
Features
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•
•
•
•
•
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
•
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
14 AMPERES, 25 VOLTS
R
DS(on)
= 70.4 mW (Typ)
N−CHANNEL
D
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Case
Total Power Dissipation @ T
A
= 25°C
Drain Current
−
Continuous @ T
A
= 25°C, Chip
−
Continuous @ T
A
= 25°C, Limited by Package
−
Single Pulse (tp
≤
10
ms)
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
−
Continuous @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
−
Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
I
D
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
T
L
Value
25
±20
6.0
20.8
14
11.4
28
80
1.56
3.1
120
1.04
2.5
−55
to
150
260
Unit
Vdc
Vdc
°C/W
W
A
A
A
°C/W
W
A
°C/W
W
A
°C
°C
1
Gate
1 2
3
1
2
4
4
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
CASE 369D
DPAK−3
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
YWW
T14
N03G
4 Drain
YWW
T14
N03G
3
Source
1
Gate
2
Drain
3
Source
Publication Order Number:
NTD14N03R/D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
2
Drain
Y
WW
14N03
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 7
1
NTD14N03R, NVD14N03R
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
(V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 5 Adc)
(V
GS
= 10 Vdc, I
D
= 5 Adc)
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
GS
= 5 Vdc, I
D
= 5 Adc,
V
DS
= 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 5 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 5 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−
−
−
−
0.93
0.82
6.6
4.75
1.88
0.002
1.2
−
−
−
−
−
mC
Vdc
ns
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 5 Adc, R
G
= 3
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
3.8
27
9.6
2.0
1.8
0.8
0.7
−
−
−
−
−
−
−
nC
ns
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
115
62
33
−
−
−
pF
V
GS(th)
1.0
−
−
−
−
1.5
−
117
70.4
7.0
2.0
−
130
95
−
Vdc
mV/°C
mW
V(br)
DSS
25
−
−
−
−
28
−
−
−
−
−
−
1.0
10
±100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
g
FS
Mhos
Reverse Recovery Time
(I
S
= 5 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
t
rr
t
a
t
b
Q
RR
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2
NTD14N03R, NVD14N03R
TYPICAL CHARACTERISTICS
14
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
4
2
0
0
2
4
6
3V
V
GS
= 2.5 V
8
10
14
5V
4.5 V
4V
3.5 V
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
4
2
0
0
1
T
J
= 25°C
T
J
= 125°C
2
3
V
DS
≥
10 V
10 V
8V
7V
6V
T
J
=
−55°C
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.20
V
GS
= 10 V
0.16
0.12
0.08
0.04
0
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.20
Figure 2. Transfer Characteristics
T
J
= 125°C
0.16
0.12
0.08
0.04
V
GS
= 4.5 V
0
0
2
4
6
8
10
12
14
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
T
J
=
−55°C
0
2
4
6
8
10
12
14
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
10
I
D
= 5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance versus Drain Current
and Temperature
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD14N03R, NVD14N03R
TYPICAL CHARACTERISTICS
200
160
120
80
40
0
C
iss
C
rss
C
iss
8
V
DS
= 0 V V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
6
Q
1
Q
T
Q
2
V
GS
4
C
oss
C
rss
2
I
D
= 5 A
T
J
= 25°C
0
0
0.4
0.8
1.2
1.6
2.0
Q
g
, TOTAL GATE CHARGE (nC)
10
5
V
GS
0 V
DS
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
100
70
I
S
, SOURCE CURRENT (AMPS)
60
50
40
30
20
10
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
DS
= 10 V
I
D
= 5 A
V
GS
= 10 V
t
r
V
GS
= 0 V
t, TIME (ns)
10
t
d(off)
t
d(on)
t
f
T
J
= 150°C
1
T
J
= 25°C
0
0.2
0.4
0.6
0.8
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
Figure 10. Diode Forward Voltage versus
Current
I
D
, DRAIN CURRENT (A)
10
10
ms
100
ms
1
0 V < V
GS
< 20 V
Single Pulse
T
A
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1 ms
10 ms
0.1
dc
0.01
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTD14N03R, NVD14N03R
TYPICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
1 0.01
R(t)
(°C/W)
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
ORDERING INFORMATION
Device
NTD14N03RT4G
NVD14N03RT4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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