ZVP4105ASTOA datasheet, PDF - EEWORLD Datasheet

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ZVP4105ASTOA: DescriptionMOSFET P-Chnl 50V; CategoryDiscrete semiconductor The transistor; File Size49KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZVP4105ASTOA Overview

MOSFET P-Chnl 50V

ZVP4105ASTOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.18 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 50 Volt V

DS

* R

DS(on)

=10Ω

* Low threshold

ZVP4105A

D

G

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

-50

E-Line

TO92 Compatible

VALUE

-175

-520

±

20

UNIT

V

mA

V

mW

°C

625

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

-50

-0.8

-2.0

10

-15

-60

-100

10

50

40

15

6

10

18

25

MAX. UNIT CONDITIONS.

V

nA

µ

A

µ

A

Ω

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

I

D

=-0.25mA, V

GS

=0V

ID=-1mA, V

DS

= V

GS

V

GS

=

±

20V, V

DS

=0V

V

DS

=-50V, V

GS

=0V

V

DS

=-50V, V

GS

=0V, T=125°C

(2)

V

DS

=-25V, V

GS

=0V

V

GS

=-5V,I

D

=-100mA

V

DS

=-25V,I

D

=-100mA

nA

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)(4)

Common Source Output

Capacitance (2)(4)

Reverse Transfer

Capacitance (2)(4)

Rise Time (2)(3)(4)

Fall Time (2)(3)(4)

g

fs

C

iss

C

oss

C

rss

mS

pF

ns

V

DS

=-25V, V

GS

=0V, f=1MHz

Turn-On Delay Time (2)(3)(4) t

d(on)

t

r

t

f

Turn-Off Delay Time (2)(3)(4) t

d(off)

V

DD

≈

-30V, I

D

=-270mA

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2%

(2) Sample test.

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

3-435

(

4

)

ZVP4105ASTOA Related Products

	ZVP4105ASTOA	ZVP4105ASTZ
Description	MOSFET P-Chnl 50V	MOSFET P-Chnl 50V
Is it Rohs certified?	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	0.18 A	0.18 A
Maximum drain-source on-resistance	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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