BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
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•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
C
−5.0
−100
−200
V
mAdc
mAdc
V
Value
Unit
V
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
M
G
556
mW
mW/°C
°C/W
xx
Max
Unit
MARKING DIAGRAM
xx M
G
G
1
= Device Code
xx = (Refer to page 6)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 15
Publication Order Number:
BC856ALT1/D
BC856ALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V
(BR)CEO
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
V
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
BC856 S, SBC856eries
(I
C
= −10
mA,
V
EB
= 0) BC857A, SBC857A, BC857B, SBC857B Only
BC858, NSVB858, BC859 Series
Collector −Base Breakdown Voltage
(I
C
= −10
mA)
Emitter −Base Breakdown Voltage
(I
E
= −1.0
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current
(V
CB
= −30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
BC856A, SBC856A, BC857A, SBC857A, BC858A
(I
C
= −10
mA,
V
CE
= −5.0 V) BC856B, SBC856B, BC857B, SBC857B,
BC858B, NSVBC858B
BC857C, SBC857C BC858C
(I
C
= −2.0 mA, V
CE
= −5.0 V)
BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
BC857C, SBC857C, BC858C, BC859C
I
CBO
nA
mA
h
FE
−
−
−
125
220
420
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
250
475
800
−
Collector −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
Base −Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
V
CE(sat)
−
−
V
BE(sat)
−
−
V
BE(on)
−0.6
−
−0.75
−0.82
−
−
−0.3
−0.65
V
V
V
f
T
C
ob
NF
100
−
−
−
−
4.5
MHz
pF
dB
−
−
−
−
10
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC856ALT1G Series
BC857/BC858/BC859/SBC857/NSVBC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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BC856ALT1G Series
BC856/SBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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BC856ALT1G Series
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 83.3°C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
500
1.0 k
2.0 k
5.0 k 10 k
D = 0.5
0.2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
T
A
= 25°C
T
J
= 25°C
3 ms
-10
-5.0
-2.0
-1.0
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate I
C
−V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
Figure 14. Active Region Safe Operating Area
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