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NSVBC858CLT1G

Description
Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V
CategoryDiscrete semiconductor    The transistor   
File Size141KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NSVBC858CLT1G Overview

Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V

NSVBC858CLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
www.onsemi.com
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
C
−5.0
−100
−200
V
mAdc
mAdc
V
Value
Unit
V
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
M
G
556
mW
mW/°C
°C/W
xx
Max
Unit
MARKING DIAGRAM
xx M
G
G
1
= Device Code
xx = (Refer to page 6)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 15
Publication Order Number:
BC856ALT1/D

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Description Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR Bipolar Transistors - BJT 100mA 50V PNP Bipolar Transistors - BJT 100mA 30V PNP Bipolar Transistors - BJT 45V 100mA PNP SILCON Bipolar Transistors - Pre-Biased SS SOT23 GP XSTR PNP 45V Bipolar Transistors - BJT 100mA 80V PNP Bipolar Transistors - BJT 100mA 30V PNP Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR Bipolar Transistors - BJT 100mA 30V PNP
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Manufacturer packaging code 318-08 318-08 318-08 318-08 318-08 318-08 318-08 318-08 318-08 318-08
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V 45 V 30 V 45 V 45 V 65 V 30 V 65 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 125 220 420 420 220 220 125 220 220
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Contacts 3 3 3 3 3 - 3 3 3 3
Factory Lead Time 4 weeks 2 weeks 1 week 4 weeks 8 weeks 5 weeks 1 week 1 week - 1 week
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C -55 °C -55 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260 260 NOT SPECIFIED - 260 260 NOT SPECIFIED 260
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 40 40 NOT SPECIFIED - 40 40 NOT SPECIFIED 40
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum power dissipation(Abs) - 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W 0.225 W 0.3 W 0.3 W 0.3 W
Base Number Matches - 1 1 1 1 - 1 1 1 1
Parts packaging code - - SOT-23 SOT-23 SOT-23 - SOT-23 SOT-23 - SOT-23
Certification status - - Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified
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