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TIP30C

Description
Bipolar Transistors - BJT PNP Gen Pur Power
CategoryDiscrete semiconductor    The transistor   
File Size148KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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TIP30C Overview

Bipolar Transistors - BJT PNP Gen Pur Power

TIP30C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)245
Polarity/channel typePNP
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max0.7 V
TIP30C
Low voltage PNP power transistor
Application
.
General purpose switching and amplifier
Description
The device is manufactured in planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage. The
NPN type is TIP29C.
TO-220
1
Figure 1.
Table 1.
O
so
b
Order code
TIP30C
te
le
Device summary
Marking
TIP30C
Package
TO-220
Packaging
Tube
ro
P
uc
d
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t(
so
b
-O
P
te
le
Internal schematic diagram
od
r
s)
t(
uc
2
3
October 2007
Rev 1
1/9
www.st.com
9

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