TIP30C
Low voltage PNP power transistor
Application
■
.
General purpose switching and amplifier
Description
The device is manufactured in planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage. The
NPN type is TIP29C.
TO-220
1
Figure 1.
Table 1.
O
so
b
Order code
TIP30C
te
le
Device summary
Marking
TIP30C
Package
TO-220
Packaging
Tube
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
Internal schematic diagram
od
r
s)
t(
uc
2
3
October 2007
Rev 1
1/9
www.st.com
9
Absolute maximum ratings
TIP30C
1
Absolute maximum ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitte-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T
case
= 25°C
T
amb
= 25°C
Storage temperature
Max. operating junction temperature
Value
-100
-100
-5
-1
-3
-0.4
30
2
Unit
V
V
V
A
A
A
W
W
-65 to 150
150
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
°C
°C
2/9
TIP30C
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C;
unless otherwise specified)
Table 3.
Symbol
I
CEO
I
CES
I
EBO
V
CEO(sus)
(1)
Electrical characteristics
Parameter
Collector cut-off current
(I
B
= 0)
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Test conditions
V
CE
= -60 V
V
CE
=-100 V
V
EB
= -5 V
Min.
Typ.
Max.
-0.3
-0.2
-1
Unit
mA
mA
mA
I
C
= -30 mA
-100
V
CE(sat)(1)
I
C
= -1 A
_
I
C
= -1 A
I
C
= -200 mA
I
C
= -1 A
_
I
B
= -125 mA
V
CE
= -4 V
V
BE(on)(1)
Base-emitter voltage
h
FE(1)
DC current gain
1. Pulsed duration = 300 ms, duty cycle
≥1.5%.
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
te
le
V
CE
= -4V
V
CE
= -4V
r
P
40
15
od
s)
t(
uc
-0.7
-1.3
75
V
V
V
3/9
Electrical characteristics
TIP30C
2.1
Typical characteristic (curves)
Figure 2.
DC current gain
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Resistive load switching time Figure 7.
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
Resistive load switching time
4/9
TIP30C
Figure 8.
Derating curve
Electrical characteristics
2.2
Test circuits
Figure 9.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
5/9
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