NTA4153N, NTE4153N,
NVA4153N, NVE4153N
Small Signal MOSFET
20 V, 915 mA, Single N−Channel
with ESD Protection, SC−75 and SC−89
http://onsemi.com
Features
•
•
•
•
Low R
DS(on)
Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
Pb−Free Packages are Available
Applications
V
(BR)DSS
R
DS(on)
TYP
0.127
W
@ 4.5 V
I
D
MAX
20 V
0.170
W
@ 2.5 V
0.242
W
@ 1.8 V
0.500
W
@ 1.5 V
3
915 mA
N−Channel MOSFET
•
•
•
•
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
1
2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
P
D
I
DM
T
J
,
T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
Value
20
±6.0
915
660
300
1.3
−55 to
150
280
260
mW
A
3
2
1
Units
V
V
mA
1
3
MARKING DIAGRAM &
PIN ASSIGNMENT
SC−75 / SOT−416
CASE 463
2
STYLE 5
3
Drain
XX MG
G
1
Gate
2
Source
Steady State
t
p
=10
ms
SC−89
CASE 463C
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
mA
°C
XX
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
SC−75 / SOT−416
SC−89
Symbol
R
qJA
416
400
Value
Units
°C/W
Gate
1
SC−75, SC−89
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
3
Drain
Source
2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
December, 2014 − Rev. 7
Publication Order Number:
NTA4153N/D
NTA4153N, NTE4153N, NVA4153N, NVE4153N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, V
DS
= 16 V
V
DS
= 0 V, V
GS
=
±4.5
V
V
GS
= 0 V, I
D
= 250
mA
20
26
18.4
100
±1.0
V
mV/°C
nA
mA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 4.5 V, I
D
= 600 mA
V
GS
= 2.5 V, I
D
= 500 mA
V
GS
= 1.8 V, I
D
= 350 mA
V
GS
= 1.5 V, I
D
= 40 mA
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.2 A, R
G
= 10
W
3.7
4.4
25
7.6
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 0.2 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16 V
110
16
12
1.82
0.2
0.3
0.42
nC
pF
g
FS
V
DS
= 10 V, I
D
= 400 mA
V
GS
= V
DS
, I
D
= 250
mA
0.45
0.76
−2.15
127
170
242
500
1.4
230
275
700
950
S
1.1
V
mV/°C
mW
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C
T
J
= 125°C
0.67
0.54
1.1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTA4153N, NTE4153N, NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
2.0 V
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 2.6 V to 5.0 V
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6 V
1.4 V
0
0
0.4
0.8
1.2
1.8 V
I
D,
DRAIN CURRENT (AMPS)
1.0
1.0
0.8
0.6
0.4
T
J
= 125°C
0.2
T
J
= −55°C
1.6
2.0
1.2
V
DS
w
10 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.4
V
GS
= 4.5 V
0.3
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.4
Figure 2. Transfer Characteristics
V
GS
= 2.5 V
0.3
T
J
= 125°C
0.2
T
J
= 25°C
T
J
= −55°C
0.1
0.2
T
J
= 125°C
T
J
= 25°C
0.1
T
J
= −55°C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 0.35 A
V
GS
= 4.5 V
C, CAPACITANCE (pF)
Figure 4. On−Resistance vs. Drain Current and
Temperature
200
T
J
= 25°C
V
GS
= 0 V
160
C
ISS
120
1.4
1.2
1.0
80
C
OSS
C
RSS
0
4
8
12
16
20
0.8
40
0.6
−50
−25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
http://onsemi.com
3
NTA4153N, NTE4153N, NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
5
I
S
, SOURCE CURRENT (AMPS)
Q
T
4
0.6
V
GS
= 0 V
0.5
0.4
0.3
0.2
0.1
T
J
= 25°C
0
0
0.4
0.8
1.2
1.6
Q
G
, TOTAL GATE CHARGE (nC)
2.0
T
J
= 125°C
3
Q
GS
Q
GD
2
1
0
I
D
= 0.2 A
T
A
= 25°C
0
0.2
0.4
0.6
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 8. Diode Forward Voltage vs. Current
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 9. Normalized Thermal Response
ORDERING INFORMATION
Device
NTA4153NT1
NTA4153NT1G
NTE4153NT1G
NVA4153NT1G
NVE4153NT1G
Marking
TR
TR
TP
VR
VP
Package
SC−75 / SOT−416
SC−75 / SOT−416
(Pb−Free)
SC−89
(Pb−Free)
SC−75 / SOT−416
(Pb−Free)
SC−89
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
NTA4153N, NTE4153N, NVA4153N, NVE4153N
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
−E−
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
e
1
−D−
b
3 PL
0.20 (0.008)
M
D
H
E
0.20 (0.008) E
DIM
A
A1
b
C
D
E
e
L
H
E
C
A
L
A1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
