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MBT3946DW1T2

Description
Bipolar Transistors - BJT 200mA 40V Dual
CategoryDiscrete semiconductor    The transistor   
File Size169KB,11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MBT3946DW1T2 Overview

Bipolar Transistors - BJT 200mA 40V Dual

MBT3946DW1T2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeCASE 419B-02
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns
Base Number Matches1
MBT3946DW1T1G,
SMBT3946DW1T1G
Complementary General
Purpose Transistor
The MBT3946DW1T1G device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low-power surface mount applications
where board space is at a premium.
Features
http://onsemi.com
h
FE
, 100−300
Low V
CE(sat)
,
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Table 1. MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
(NPN)
(PNP)
Collector
Base Voltage
(NPN)
(PNP)
Emitter
−Base
Voltage
(NPN)
(PNP)
Collector Current
Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
V
CEO
Value
40
−40
60
−40
6.0
−5.0
200
−200
Unit
Vdc
SOT−363/SC−88
CASE 419B
STYLE 1
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
(6)
MARKING DIAGRAM
V
CBO
Vdc
46 M
G
G
V
EBO
Vdc
I
C
mAdc
ESD
HBM Class 2
MM Class B
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MBT3946DW1T1G
Package
SC−88
(Pb-Free)
SC−88
(Pb-Free)
SC−88
(Pb-Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Table 2. THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
SMBT3946DW1T1G
MBT3946DW1T2G
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
Rev. 7
1
Publication Order Number:
MBT3946DW1T1/D

MBT3946DW1T2 Related Products

MBT3946DW1T2 MBT3946DW1T1
Description Bipolar Transistors - BJT 200mA 40V Dual Bipolar Transistors - BJT 200mA 40V Dual
Parts packaging code SC-88 SC-88
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Manufacturer packaging code CASE 419B-02 419B-02
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz
Maximum off time (toff) 250 ns 250 ns
Maximum opening time (tons) 70 ns 70 ns
Base Number Matches 1 1
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